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    FLIP EDGE SHADOW FRAME
    1.
    发明申请
    FLIP EDGE SHADOW FRAME 审中-公开
    卷边边框

    公开(公告)号：US20130263782A1

    公开(公告)日：2013-10-10

    申请号：US13569064

    申请日：2012-08-07

    申请人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

    发明人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

    IPC分类号： C23C16/04

    摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

    摘要翻译： 本文描述了用于处理衬底的装置。 用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面， 以及与阴影框体连接的可拆卸唇缘。 可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

    SUBSTRATE SUPPORT WITH CERAMIC INSULATION
    2.
    发明申请
    SUBSTRATE SUPPORT WITH CERAMIC INSULATION 有权
    基板支持与陶瓷绝缘

    公开(公告)号：US20130228124A1

    公开(公告)日：2013-09-05

    申请号：US13773579

    申请日：2013-02-21

    申请人： Gaku FURUTA ,  John M. WHITE ,  Shinichi KURITA ,  Soo Young CHOI ,  Suhail ANWAR ,  Robin L. TINER

    发明人： Gaku FURUTA ,  John M. WHITE ,  Shinichi KURITA ,  Soo Young CHOI ,  Suhail ANWAR ,  Robin L. TINER

    IPC分类号： C23C16/458

    CPC分类号： C23C16/458 ,  C23C16/4585 ,  H01J37/32559 ,  H01J37/32577 ,  H01J37/32715

    摘要： Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.

    摘要翻译： 本发明的实施例一般涉及用于等离子体处理室的基板支撑件。 金属的衬底支撑件具有陶瓷插入件，以防止衬底支撑件和用于在加工期间保护衬底支撑件的边缘的阴影框架之间的电弧。 在大面积基板处理室中，阴影框架可以包括多个部件。 单独的部件可以联接在一起，但间隔开间隔开以允许热膨胀。 陶瓷插入件定位在基板支撑件上，使得当阴影框架相邻定位时，陶瓷插入件位于阴影框架中的间隙附近。 邻近间隙的陶瓷插件防止和/或减少电弧，因为间隙位于电绝缘材料上而不是导电材料上。

    Plasma processing including asymmetrically grounding a susceptor
    3.
    发明申请
    Plasma processing including asymmetrically grounding a susceptor 有权
    等离子体处理包括不对称接地的感受器

    公开(公告)号：US20110236599A1

    公开(公告)日：2011-09-29

    申请号：US13153641

    申请日：2011-06-06

    申请人： Gaku Furuta ,  Soo Young Choi ,  Young-Jin Choi

    发明人： Gaku Furuta ,  Soo Young Choi ,  Young-Jin Choi

    IPC分类号： C23C16/509 ,  C23C16/455 ,  C23C16/458

    CPC分类号： C23C16/4585 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32623 ,  H01J37/32697

    摘要： An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of grounding straps are connected between the periphery of the susceptor to the grounded vacuum chamber to shorten the grounding paths for RF electrons. Flexible straps allow the susceptor to vertically move. The straps provide a conductance to ground which is asymmetric around the periphery. The straps may be evenly spaced but have different thicknesses or different shapes or be removed from available grounding point and hence provide different RF conductances. The asymmetry is selected to improve the deposition uniformity and other qualities of the PECVD deposited film.

    摘要翻译： 用于等离子体处理室中的不对称接地的基座，用于化学气相沉积到由基座支撑并接地的大矩形面板上。 多个接地带连接在基座的外围与接地的真空室之间，以缩短RF电子的接地路径。 柔性带允许基座垂直移动。 带子提供对周边不对称的地面电导。 带可以是均匀间隔的，但是具有不同的厚度或不同的形状，或者从可用的接地点去除并因此提供不同的RF电导。 选择不对称性以改善PECVD沉积膜的沉积均匀性和其他质量。

    METHOD TO PREVENT THIN SPOT IN LARGE SIZE SYSTEM
    6.
    发明申请
    METHOD TO PREVENT THIN SPOT IN LARGE SIZE SYSTEM 审中-公开
    在大型系统中防止漏点的方法

    公开(公告)号：US20100151688A1

    公开(公告)日：2010-06-17

    申请号：US12634921

    申请日：2009-12-10

    申请人： Young Jin Choi ,  Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park

    发明人： Young Jin Choi ,  Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park

    IPC分类号： H01L21/3065 ,  H01L21/302

    CPC分类号： C23C16/4583 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32733 ,  H01L21/68742

    摘要： Embodiments disclosed herein generally include methods of ensuring uniform deposition on a substrate. The smallest gap between a portion of the substrate and the substrate support upon which the substrate rests may lead to uneven deposition of material or ‘thin spots’ on the substrate. Large area substrates, due to their size, are susceptible to numerous gaps at random locations. By inducing an electrostatic charge on the substrate prior to placing the substrate onto the substrate support, the substrate may be placed generally flush against the substrate support. The electrostatic charge on the substrate creates an attraction between the substrate and substrate support to pull substantially the entire surface of the substrate into contact with the substrate support. Material may then be substantially uniformly deposited on the substrate while reducing ‘thin spots’.

    摘要翻译： 本文公开的实施例通常包括确保在基底上均匀沉积的方法。 衬底的一部分和衬底支撑物之间的最小间隙可能导致材料的不均匀沉积或衬底上的“薄点”。 由于其大尺寸，大面积基板在随机位置易受许多间隙的影响。 通过在将衬底放置在衬底支撑件上之前在衬底上引起静电电荷，衬底可以放置在与衬底支撑件相对齐齐的位置。 衬底上的静电电荷在衬底和衬底支撑件之间产生吸引力，以基本上将衬底的整个表面拉到与衬底支撑件接触。 然后可以将材料基本均匀地沉积在衬底上，同时减少“薄点”。

    Deposition repeatability of PECVD films
    8.
    发明申请
    Deposition repeatability of PECVD films 有权
    PECVD膜的沉积重复性

    公开(公告)号：US20060019031A1

    公开(公告)日：2006-01-26

    申请号：US10898472

    申请日：2004-07-23

    申请人： Gaku Furuta ,  Tae Won ,  John White

    发明人： Gaku Furuta ,  Tae Won ,  John White

    IPC分类号： C23C16/00

    CPC分类号： C23C16/0209 ,  C23C16/5096

    摘要： We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.

    摘要翻译： 当在沉积室中顺序地处理多个基板时，我们具有提高膜的化学气相沉积（CVD）的沉积速率均匀性的方法。 该方法包括当衬底存在于沉积室中时，围绕衬底的处理体积内的至少一个处理体积结构的等离子体预热。 我们还有一种装置控制的方法，其可以在沉积室中顺次地串联处理多个基板的开始时调整几个基板的沉积时间，使得沉积膜厚度在处理期间保持基本恒定 系列底物。 将这些方法组合成单一方法提供了从基材到底物控制平均膜厚度方面的最佳总体结果。