发明申请
US20100200995A1 COUPLING LAYER COMPOSITION FOR A SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF FORMING THE COUPLING LAYER, AND APPARATUS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE
审中-公开
用于半导体器件的耦合层组合物，半导体器件，形成耦合层的方法以及用于制造半导体器件的装置
- 专利标题： COUPLING LAYER COMPOSITION FOR A SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF FORMING THE COUPLING LAYER, AND APPARATUS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE
- 专利标题（中）： 用于半导体器件的耦合层组合物，半导体器件，形成耦合层的方法以及用于制造半导体器件的装置
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申请号： US12665070申请日： 2007-07-09
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公开(公告)号： US20100200995A1公开(公告)日： 2010-08-12
- 发明人: Philippe Monnoyer , Maria Luisa Calvo-Munoz , Janos Farkas , Sabine Szunerits
- 申请人： Philippe Monnoyer , Maria Luisa Calvo-Munoz , Janos Farkas , Sabine Szunerits
- 申请人地址： US TX Austin
- 专利权人： Freeescale Semiconductor, Inc
- 当前专利权人： Freeescale Semiconductor, Inc
- 当前专利权人地址： US TX Austin
- 国际申请： PCT/IB07/53437 WO 20070709
- 主分类号： H01L23/535
- IPC分类号： H01L23/535 ; B05C13/00 ; B05D3/06
摘要：
Molecules of a coupling layer composition in a semiconductor device are bidimensionally polymerized in order to provide enhanced moisture blocking effect, particularly when the coupling layer is formed on a porous layer, such as a porous dielectric layer. The deposition of the coupling layer on the underlying structure and/or the cross-polymerization of the coupling layer composition and/or a final metallization can be photo-activated, especially, but not only, using an ultraviolet light.
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