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    Method For Testing a Slurry Used to Form a Semiconductor Device
    2.
    发明申请
    Method For Testing a Slurry Used to Form a Semiconductor Device 有权
    用于测试用于形成半导体器件的浆料的方法

    公开(公告)号：US20080282778A1

    公开(公告)日：2008-11-20

    申请号：US12091693

    申请日：2005-10-25

    申请人： Philippe Monnoyer ,  Janos Farkas ,  Farid Sebaai

    发明人： Philippe Monnoyer ,  Janos Farkas ,  Farid Sebaai

    IPC分类号： G01N11/00

    CPC分类号： C09G1/02 ,  G01N15/04 ,  G01N29/032 ,  G01N2291/02416

    摘要： A method for forming a semiconductor device, the method includes providing a semiconductor substrate, applying a slurry to the semiconductor substrate, wherein the slurry was tested using a testing method includes taking a first undiluted sample from a top of the slurry; determining a first particle size distribution characteristic of the first undiluted sample; taking a second undiluted sample from a bottom of the slurry; determining a second particle size distribution characteristic of the second undiluted sample; and comparing a difference between the first particle size distribution characteristic and the second particle size distribution characteristics with a first predetermined value.

    摘要翻译： 一种形成半导体器件的方法，所述方法包括提供半导体衬底，向半导体衬底施加浆料，其中使用测试方法测试所述浆料，包括从所述浆料的顶部取出第一未稀释的样品; 确定第一未稀释样品的第一粒度分布特性; 从浆料的底部取出第二个未稀释的样品; 确定第二未稀释样品的第二粒度分布特征; 以及将第一粒度分布特性和第二粒度分布特性之间的差与第一预定值进行比较。

    Method for testing a slurry used to form a semiconductor device
    4.
    发明授权
    Method for testing a slurry used to form a semiconductor device 有权
    用于测试用于形成半导体器件的浆料的方法

    公开(公告)号：US08061185B2

    公开(公告)日：2011-11-22

    申请号：US12091693

    申请日：2005-10-25

    申请人： Philippe Monnoyer ,  Janos Farkas ,  Farid Sebaai

    发明人： Philippe Monnoyer ,  Janos Farkas ,  Farid Sebaai

    IPC分类号： G01N29/04 ,  G01N29/28

    CPC分类号： C09G1/02 ,  G01N15/04 ,  G01N29/032 ,  G01N2291/02416

    摘要： A method for forming a semiconductor device, the method includes providing a semiconductor substrate, applying a slurry to the semiconductor substrate, wherein the slurry was tested using a testing method includes taking a first undiluted sample from a top of the slurry; determining a first particle size distribution characteristic of the first undiluted sample; taking a second undiluted sample from a bottom of the slurry; determining a second particle size distribution characteristic of the second undiluted sample; and comparing a difference between the first particle size distribution characteristic and the second particle size distribution characteristics with a first predetermined value.

    摘要翻译： 一种形成半导体器件的方法，所述方法包括提供半导体衬底，向半导体衬底施加浆料，其中使用测试方法测试所述浆料，包括从所述浆料的顶部取出第一未稀释的样品; 确定第一未稀释样品的第一粒度分布特性; 从浆料的底部取出第二个未稀释的样品; 确定第二未稀释样品的第二粒度分布特征; 以及将第一粒度分布特性和第二粒度分布特性之间的差与第一预定值进行比较。

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    5.
    发明申请
    "UNIVERSAL" BARRIER CMP SLURRY FOR USE WITH LOW DIELECTRIC CONSTANT INTERLAYER DIELECTRICS 审中-公开
    “通用”BARRIER CMP浆料用于低介电常数中间层电介质

    公开(公告)号：US20090045164A1

    公开(公告)日：2009-02-19

    申请号：US12162173

    申请日：2006-02-03

    申请人： Janos Farkas ,  Philippe Monnoyer ,  Brad Smith ,  Mark Zaleski

    发明人： Janos Farkas ,  Philippe Monnoyer ,  Brad Smith ,  Mark Zaleski

    IPC分类号： H01L21/306 ,  C09G1/02 ,  H01L21/304

    CPC分类号： C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

    摘要： During processing of a semiconductor wafer bearing a structure including a low-k dielectric layer, a cap layer and the metal-diffusion barrier layer, a chemical mechanical polishing method applied to remove the metal-diffusion barrier material involves two phases. In the second phase of the barrier-CMP method, when the polishing interface is close to the low-k dielectric material, the polishing conditions are changed so as to be highly selective, producing a negligible removal rate of the low-k dielectric material. The polishing conditions can be changed in a number of ways including: changing parameters of the composition of the barrier slurry composition, and mixing an additive into the barrier slurry.

    摘要翻译： 在具有包含低k电介质层，盖层和金属扩散阻挡层的结构的半导体晶片的处理期间，应用于去除金属扩散阻挡材料的化学机械抛光方法涉及两相。 在阻挡CMP法的第二阶段中，当抛光界面接近低k电介质材料时，抛光条件发生变化，从而具有高选择性，产生低k电介质材料的去除率可忽略不计。 抛光条件可以以多种方式改变，包括：改变阻挡浆料组合物的组成的参数，以及将添加剂混合到阻挡浆料中。

    BARRIER SLURRY COMPOSITIONS AND BARRIER CMP METHODS
    6.
    发明申请
    BARRIER SLURRY COMPOSITIONS AND BARRIER CMP METHODS 审中-公开
    BARRIER浆料组合物和BARRIER CMP方法

    公开(公告)号：US20090209103A1

    公开(公告)日：2009-08-20

    申请号：US12162177

    申请日：2007-01-02

    申请人： Philippe Monnoyer

    发明人： Philippe Monnoyer

    IPC分类号： H01L21/304 ,  C09G1/02

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： A new barrier slurry composition enables metal and barrier layer material (as well as cap layer material, if necessary) to be removed at a practical rate whilst eliminating, or significantly reducing, the removal of underlying low-k or ultra-low-k dielectric material. The barrier slurry composition comprises: water, an oxidizing agent such as hydrogen peroxide, an abrasive such as colloidal silica abrasive, a complexing agent such as citrate, and may comprise a corrosion inhibitor such as benzotriazole. The preferential removal of cap layer material relative to underlying ULK dielectric material can be enhanced by including in the barrier slurry composition a first additive, such as sodium bis(2-ethylhexyl) sulfosuccinate. The removal rate of the barrier layer material can be tuned by including in the barrier slurry composition a second additive, such as ammonium nitrate.

    摘要翻译： 新的阻隔浆料组合物使金属和阻挡层材料（以及必要时的覆盖层材料）以实际的速率除去，同时消除或显着降低下面的低k或超低k电介质的去除 材料。 阻隔浆料组合物包括：水，氧化剂如过氧化氢，研磨剂如胶体二氧化硅磨料，络合剂如柠檬酸盐，并且可以包含腐蚀抑制剂如苯并三唑。 可以通过在阻挡浆料组合物中包含第一添加剂如二（2-乙基己基）磺基琥珀酸钠来提高盖层​​材料相对于下面的ULK介电材料的优先除去。 可以通过在阻挡浆料组合物中包含第二添加剂例如硝酸铵来调节阻挡层材料的去除速率。