发明申请
US20100205504A1 Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process
有权
自动刷新，以提高标准CMOS逻辑过程中嵌入式非易失性存储器的数据保留和耐久性
- 专利标题： Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process
- 专利标题（中）： 自动刷新，以提高标准CMOS逻辑过程中嵌入式非易失性存储器的数据保留和耐久性
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申请号： US12378249申请日： 2009-02-11
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公开(公告)号： US20100205504A1公开(公告)日： 2010-08-12
- 发明人: Stephen Fung , Vithal Rao , Da-Guang Yu , J. Eric Ruetz , Chee T. Chua , Jawji Chen , Kameswara K. Rao
- 申请人： Stephen Fung , Vithal Rao , Da-Guang Yu , J. Eric Ruetz , Chee T. Chua , Jawji Chen , Kameswara K. Rao
- 申请人地址： US CA Sunnyvale
- 专利权人： Mosys, Inc.
- 当前专利权人： Mosys, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H03M13/05
- IPC分类号： H03M13/05 ; G06F11/10
摘要：
A method for selectively refreshing data in a nonvolatile memory array based on failure type detected by an error correction code. If the page is determined to be error-free, no refresh operation takes place. Otherwise, if single-error words on a page contain erased and programmed bit errors, then a refresh operation, consisting of an erase and program, takes place. The erase operation is skipped if single-error words on a page solely contain a program failure.
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