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1.发明授权Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process 有权自动刷新，以提高标准CMOS逻辑过程中嵌入式非易失性存储器的数据保留和耐久性公开(公告)号：US08161355B2
公开(公告)日：2012-04-17
申请号：US12378249
申请日：2009-02-11
申请人： Stephen Fung , Vithal Rao , Da-Guang Yu , J. Eric Ruetz , Chee T. Chua , Jawji Chen , Kameswara K. Rao
发明人： Stephen Fung , Vithal Rao , Da-Guang Yu , J. Eric Ruetz , Chee T. Chua , Jawji Chen , Kameswara K. Rao
IPC分类号： G11C29/00
CPC分类号： G11C16/3431 , G06F11/1068 , G11C16/10 , G11C29/52 , G11C2029/0411 , H03M13/19
摘要： A method for selectively refreshing data in a nonvolatile memory array based on failure type detected by an error correction code. If the page is determined to be error-free, no refresh operation takes place. Otherwise, if single-error words on a page contain erased and programmed bit errors, then a refresh operation, consisting of an erase and program, takes place. The erase operation is skipped if single-error words on a page solely contain a program failure.
摘要翻译： 一种用于基于由纠错码检测到的故障类型来选择性地刷新非易失性存储器阵列中的数据的方法。 如果页面被确定为无错误，则不会进行刷新操作。 否则，如果页面上的单个错误字含有擦除和编程的位错误，则会执行由擦除和程序组成的刷新操作。 如果页面上的单个错误单词仅包含程序故障，则会擦除擦除操作。
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2.发明申请Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process 有权自动刷新，以提高标准CMOS逻辑过程中嵌入式非易失性存储器的数据保留和耐久性公开(公告)号：US20100205504A1
公开(公告)日：2010-08-12
申请号：US12378249
申请日：2009-02-11
申请人： Stephen Fung , Vithal Rao , Da-Guang Yu , J. Eric Ruetz , Chee T. Chua , Jawji Chen , Kameswara K. Rao
发明人： Stephen Fung , Vithal Rao , Da-Guang Yu , J. Eric Ruetz , Chee T. Chua , Jawji Chen , Kameswara K. Rao
CPC分类号： G11C16/3431 , G06F11/1068 , G11C16/10 , G11C29/52 , G11C2029/0411 , H03M13/19
摘要： A method for selectively refreshing data in a nonvolatile memory array based on failure type detected by an error correction code. If the page is determined to be error-free, no refresh operation takes place. Otherwise, if single-error words on a page contain erased and programmed bit errors, then a refresh operation, consisting of an erase and program, takes place. The erase operation is skipped if single-error words on a page solely contain a program failure.
摘要翻译： 一种用于基于由纠错码检测到的故障类型来选择性地刷新非易失性存储器阵列中的数据的方法。 如果页面被确定为无错误，则不会进行刷新操作。 否则，如果页面上的单个错误字含有擦除和编程的位错误，则会执行由擦除和程序组成的刷新操作。 如果页面上的单个错误单词仅包含程序故障，则会擦除擦除操作。
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3.发明申请公开(公告)号：US20100148855A1
公开(公告)日：2010-06-17
申请号：US12334338
申请日：2008-12-12
申请人： Da-Guang Yu , Vithal Rao
发明人： Da-Guang Yu , Vithal Rao
IPC分类号： G05F1/10
CPC分类号： G05F3/24
摘要： A reference current generation circuit generates a first branch current that varies by a first percentage in response to variations in a first supply voltage and variations in transistor threshold voltage. The first branch current is mirrored to create a corresponding second branch current. A first portion (sub-current) of the second branch current is supplied through a first transistor, which exhibits the transistor threshold voltage wherein the first sub-current varies by a second percentage in response to the variations in the first supply voltage and variations in transistor threshold voltage, wherein the second percentage is greater than the first percentage. A second portion (sub-current) of the second branch current is supplied through a second transistor. The second portion of the second branch current is mirrored to create a reference current (IREF).
摘要翻译： 参考电流产生电路产生响应于第一电源电压的变化和晶体管阈值电压的变化而变化第一百分比的第一支路电流。 第一个分支电流被镜像以产生相应的第二分支电流。 通过第一晶体管提供第二分支电流的第一部分（子电流），第一晶体管呈现晶体管阈值电压，其中第一子电流响应于第一电源电压的变化而变化第二百分比， 晶体管阈值电压，其中第二百分比大于第一百分比。 第二分支电流的第二部分（子电流）通过第二晶体管提供。 第二分支电流的第二部分被镜像以产生参考电流（IREF）。
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4.发明授权公开(公告)号：US07944281B2
公开(公告)日：2011-05-17
申请号：US12334338
申请日：2008-12-12
申请人： Da-Guang Yu , Vithal Rao
发明人： Da-Guang Yu , Vithal Rao
IPC分类号： G05F1/12
CPC分类号： G05F3/24
摘要： A reference current generation circuit generates a first branch current that varies by a first percentage in response to variations in a first supply voltage and variations in transistor threshold voltage. The first branch current is mirrored to create a corresponding second branch current. A first portion (sub-current) of the second branch current is supplied through a first transistor, which exhibits the transistor threshold voltage wherein the first sub-current varies by a second percentage in response to the variations in the first supply voltage and variations in transistor threshold voltage, wherein the second percentage is greater than the first percentage. A second portion (sub-current) of the second branch current is supplied through a second transistor. The second portion of the second branch current is mirrored to create a reference current (IREF).
摘要翻译： 参考电流产生电路产生响应于第一电源电压的变化和晶体管阈值电压的变化而变化第一百分比的第一支路电流。 第一个分支电流被镜像以产生相应的第二分支电流。 通过第一晶体管提供第二分支电流的第一部分（子电流），第一晶体管呈现晶体管阈值电压，其中第一子电流响应于第一电源电压的变化而变化第二百分比， 晶体管阈值电压，其中第二百分比大于第一百分比。 第二分支电流的第二部分（子电流）通过第二晶体管提供。 第二分支电流的第二部分被镜像以产生参考电流（IREF）。
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