发明申请
- 专利标题： Radiation-Emitting Semiconductor Body
- 专利标题（中）： 辐射发射半导体体
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申请号： US12668386申请日： 2008-06-20
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公开(公告)号： US20100207100A1公开(公告)日： 2010-08-19
- 发明人: Martin Strassburg , Lutz Hocppel , Matthias Sabathil , Matthias Peter , Uwe Strauss
- 申请人： Martin Strassburg , Lutz Hocppel , Matthias Sabathil , Matthias Peter , Uwe Strauss
- 申请人地址： DE Regensburg
- 专利权人： OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人： OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人地址： DE Regensburg
- 优先权： DE102007031926.8 20070709
- 国际申请： PCT/DE2008/001039 WO 20080620
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L29/15
摘要：
A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.
公开/授权文献
- US08314415B2 Radiation-emitting semiconductor body 公开/授权日：2012-11-20
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