公开(公告)号：US20100207100A1

公开(公告)日：2010-08-19

申请号：US12668386

申请日：2008-06-20

申请人： Martin Strassburg ,  Lutz Hocppel ,  Matthias Sabathil ,  Matthias Peter ,  Uwe Strauss

发明人： Martin Strassburg ,  Lutz Hocppel ,  Matthias Sabathil ,  Matthias Peter ,  Uwe Strauss

IPC分类号： H01L33/06 ,  H01L29/15

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/3095 ,  H01S5/34333

摘要： A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.

摘要翻译： 辐射发射半导体本体包括接触层和有源区。 半导体本体具有布置在接触层和有源区之间的隧道结。 有源区具有包含至少两个有源层的多量子阱结构，当工作电流被施加到半导体本体中时，其发射电磁辐射。

公开(公告)号：US08314415B2

公开(公告)日：2012-11-20

申请号：US12668386

申请日：2008-06-20

申请人： Martin Strassburg ,  Lutz Hoeppel ,  Matthias Sabathil ,  Matthias Peter ,  Uwe Strauss

发明人： Martin Strassburg ,  Lutz Hoeppel ,  Matthias Sabathil ,  Matthias Peter ,  Uwe Strauss

IPC分类号： H01L33/06 ,  H01L29/15

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/3095 ,  H01S5/34333

摘要： A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.

摘要翻译： 辐射发射半导体本体包括接触层和有源区。 半导体本体具有布置在接触层和有源区之间的隧道结。 有源区具有包含至少两个有源层的多量子阱结构，当工作电流被施加到半导体本体中时，其发射电磁辐射。

公开(公告)号：US07981712B2

公开(公告)日：2011-07-19

申请号：US12011458

申请日：2008-01-25

申请人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

发明人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

IPC分类号： H01L21/00 ,  H01L29/22 ,  H01L21/28 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0079 ,  H01L33/16

摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

摘要翻译： 规定了基于氮化物半导体系统的光电子半导体芯片的制造方法。 该方法包括以下步骤：形成具有至少一个p掺杂区域的半导体部分; 以及在所述半导体芯片的生长方向上形成设置在所述半导体部分的下游的覆盖层，所述覆盖层具有至少一个n掺杂半导体层。 在形成覆盖层之前或期间，实现适合于电激活p掺杂区域的活化步骤。 另外规定了可以通过该方法制造的光电子半导体芯片。

公开(公告)号：US09806223B2

公开(公告)日：2017-10-31

申请号：US12985903

申请日：2011-01-06

申请人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

发明人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

IPC分类号： H01L33/32 ,  H01L33/42 ,  H01L33/00 ,  H01L21/02 ,  H01L33/16

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0079 ,  H01L33/16

摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

公开(公告)号：US20080203407A1

公开(公告)日：2008-08-28

申请号：US12011458

申请日：2008-01-25

申请人： Magnus Ahlstedt ,  Lutz Hoppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

发明人： Magnus Ahlstedt ,  Lutz Hoppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0079 ,  H01L33/16

摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

摘要翻译： 规定了基于氮化物半导体系统的光电子半导体芯片的制造方法。 该方法包括以下步骤：形成具有至少一个p掺杂区域的半导体部分; 以及在所述半导体芯片的生长方向上形成设置在所述半导体部分的下游的覆盖层，所述覆盖层具有至少一个n掺杂半导体层。 在形成覆盖层之前或期间，实现适合于电激活p掺杂区域的活化步骤。 另外规定了可以通过该方法制造的光电子半导体芯片。

公开(公告)号：US20120280207A1

公开(公告)日：2012-11-08

申请号：US13546857

申请日：2012-07-11

申请人： Adrian AVRAMESCU ,  Volker Härle ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss

发明人： Adrian AVRAMESCU ,  Volker Härle ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss

IPC分类号： H01L33/06

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3202 ,  H01S5/3407 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2） 用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。 还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。

公开(公告)号：US08994000B2

公开(公告)日：2015-03-31

申请号：US13546857

申请日：2012-07-11

申请人： Adrian Avramescu ,  Volker Härle ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss

发明人： Adrian Avramescu ,  Volker Härle ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss

IPC分类号： H01L29/06 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/04 ,  H01S5/042 ,  H01L33/06 ,  H01L33/32 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3202 ,  H01S5/3407 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2） 用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。 还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。

公开(公告)号：US20090090900A1

公开(公告)日：2009-04-09

申请号：US11989512

申请日：2006-07-28

申请人： Adrian Avramescu ,  Volker Harle ,  Lutz Hoppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss

发明人： Adrian Avramescu ,  Volker Harle ,  Lutz Hoppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3202 ,  H01S5/3407 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p-doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n-doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and a method for producing such a semiconductor chip.

摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的p掺杂阻挡层（1），有源区域（2），其中 适用于产生电磁辐射，有源区基于六方晶系化合物半导体，以及用于有源区（2）的n掺杂势垒层（3）。 还公开了包括这种半导体芯片的部件，以及这种半导体芯片的制造方法。

公开(公告)号：US08093607B2

公开(公告)日：2012-01-10

申请号：US12298703

申请日：2007-04-25

申请人： Christoph Eichler ,  Stephan Miller ,  Uwe Strauss ,  Volker Härle ,  Matthias Sabathil

发明人： Christoph Eichler ,  Stephan Miller ,  Uwe Strauss ,  Volker Härle ,  Matthias Sabathil

IPC分类号： H01L33/42

CPC分类号： H01L33/465 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.

摘要翻译： 一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。 组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。 有用层具有远离载体基底的分离区域。

公开(公告)号：US20130028281A1

公开(公告)日：2013-01-31

申请号：US13262583

申请日：2010-03-10

申请人： Adrian Avramescu ,  Désirée Queren ,  Cristoph Eichler ,  Matthias Sabathil ,  Stephen Lutgen ,  Uwe Strauss

发明人： Adrian Avramescu ,  Désirée Queren ,  Cristoph Eichler ,  Matthias Sabathil ,  Stephen Lutgen ,  Uwe Strauss

IPC分类号： H01L33/02 ,  H01S5/34

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/3407 ,  H01S5/3425 ,  H01S5/34333 ,  H01S2301/173 ,  Y10S977/95 ,  Y10S977/951 ,  H01L2924/00

摘要： In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfils the condition: 40≦∫c(z)dz−2.5N−1.5∫dz≦80

摘要翻译： 在光电子半导体芯片（1）的至少一个实施例中，后者基于氮化物材料系统并且包括至少一个有源量子阱（2）。 至少一个有源量子阱（2）被设计成在操作时产生电磁辐射。 此外，至少一个有源量子阱（2）在平行于半导体芯片（1）的生长方向z的方向上包括N个连续区域（A），N是大于或等于2的自然数。至少 有源量子阱（2）的两个区域（A）具有相互不同的平均铟含量c。 此外，至少一个有源量子阱（2）满足条件：40＆nlE;∫c（z）dz-2.5N-1.5∫dz＆nlE; 80