发明申请
US20100252531A1 Enhanced Etch and Deposition Profile Control Using Plasma Sheath Engineering
有权
使用等离子体护套工程的增强蚀刻和沉积轮廓控制
- 专利标题： Enhanced Etch and Deposition Profile Control Using Plasma Sheath Engineering
- 专利标题（中）： 使用等离子体护套工程的增强蚀刻和沉积轮廓控制
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申请号： US12645638申请日： 2009-12-23
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公开(公告)号： US20100252531A1公开(公告)日： 2010-10-07
- 发明人: Ludovic Godet , Timothy Miller , George Papasouliotis , Vikram Singh
- 申请人： Ludovic Godet , Timothy Miller , George Papasouliotis , Vikram Singh
- 主分类号： B44C1/22
- IPC分类号： B44C1/22 ; C23C16/513
摘要：
A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
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