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1.发明申请Enhanced Etch and Deposition Profile Control Using Plasma Sheath Engineering 有权使用等离子体护套工程的增强蚀刻和沉积轮廓控制公开(公告)号：US20100252531A1
公开(公告)日：2010-10-07
申请号：US12645638
申请日：2009-12-23
IPC分类号： B44C1/22 , C23C16/513
CPC分类号： B44C1/227 , C23C16/045 , C23C16/50 , H01J37/32412 , H01J37/32623 , H01J2237/3344 , H01J2237/3345
摘要： A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
摘要翻译： 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。
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2.发明授权Enhanced etch and deposition profile control using plasma sheath engineering 有权使用等离子体护套工程的增强蚀刻和沉积轮廓控制公开(公告)号：US08603591B2
公开(公告)日：2013-12-10
申请号：US12645638
申请日：2009-12-23
IPC分类号： H05H1/24
CPC分类号： B44C1/227 , C23C16/045 , C23C16/50 , H01J37/32412 , H01J37/32623 , H01J2237/3344 , H01J2237/3345
摘要： A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
摘要翻译： 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。
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3.发明授权Closed loop control and process optimization in plasma doping processes using a time of flight ion detector 有权使用飞行时间离子检测器的等离子体掺杂过程中的闭环控制和工艺优化公开(公告)号：US07586100B2
公开(公告)日：2009-09-08
申请号：US12029710
申请日：2008-02-12
IPC分类号： H01J49/40 , G01N27/26 , H01L21/31 , H01L21/469
CPC分类号： C23C14/48 , C23C14/54 , H01J37/32412 , H01J37/32935 , H01J37/3299
摘要： A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose.
摘要翻译： 使用飞行时间离子检测器控制等离子体掺杂过程的方法包括在靠近支撑衬底的压板的等离子体室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 使用飞行时间离子检测器测量存在于等离子体中的离子的光谱作为离子质量的函数。 用法拉第剂量测定系统测量影响底物的总数离子。 从测量的离子光谱确定植入物轮廓。 从测量的离子总数和计算出的植入物轮廓确定综合剂量。 响应于计算的积分剂量修改至少一个等离子体掺杂参数。
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公开(公告)号：US20120111834A1
公开(公告)日：2012-05-10
申请号：US13353993
申请日：2012-01-19
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译： 等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。
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公开(公告)号：US20100255665A1
公开(公告)日：2010-10-07
申请号：US12644103
申请日：2009-12-22
IPC分类号： H01L21/26 , C23F1/00 , C23C16/00 , H01L21/3065
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。
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公开(公告)号：US08101510B2
公开(公告)日：2012-01-24
申请号：US12644103
申请日：2009-12-22
IPC分类号： H01L21/26 , H01L21/3065 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。
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7.发明申请Method of Plasma Processing with In-Situ Monitoring and Process Parameter Tuning 审中-公开等离子体处理方法采用现场监测和工艺参数调整公开(公告)号：US20070224840A1
公开(公告)日：2007-09-27
申请号：US11687822
申请日：2007-03-19
申请人： Anthony Renau , Vikram Singh , Atul Gupta , Timothy Miller , Edwin Arevalo , George Papasouliotis , Yong Bae Jeon
发明人： Anthony Renau , Vikram Singh , Atul Gupta , Timothy Miller , Edwin Arevalo , George Papasouliotis , Yong Bae Jeon
IPC分类号： H01L21/00 , H01L21/336 , H01L21/22 , H01L21/38
CPC分类号： H01J37/32935 , H01J37/32412 , H01J37/3299 , H01L22/20
摘要： A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.
摘要翻译： 选择等离子体掺杂工艺参数的方法包括确定用于实现至少一种等离子体掺杂条件的配方参数数据库。 从配方参数数据库确定初始配方参数。 进行至少一个等离子体掺杂条件的原位测量。 至少一种等离子体掺杂条件的原位测量与至少一种等离子体掺杂结果相关。 响应于相关性改变至少一个配方参数，以便改进至少一个等离子体掺杂工艺性能度量。
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8.发明申请Closed Loop Control And Process Optimization In Plasma Doping Processes Using A Time of Flight Ion Detector 有权使用飞行时间离子检测器的等离子体掺杂过程中的闭环控制和工艺优化公开(公告)号：US20090200461A1
公开(公告)日：2009-08-13
申请号：US12029710
申请日：2008-02-12
IPC分类号： B01D59/44
CPC分类号： C23C14/48 , C23C14/54 , H01J37/32412 , H01J37/32935 , H01J37/3299
摘要： A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose.
摘要翻译： 使用飞行时间离子检测器控制等离子体掺杂过程的方法包括在靠近支撑衬底的压板的等离子体室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 使用飞行时间离子检测器测量存在于等离子体中的离子的光谱作为离子质量的函数。 用法拉第剂量测定系统测量影响底物的总数离子。 从测量的离子光谱确定植入物轮廓。 从测量的离子总数和计算出的植入物轮廓确定综合剂量。 响应于计算的积分剂量修改至少一个等离子体掺杂参数。
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9.发明申请CONTROL APPARATUS FOR PLASMA IMMERSION ION IMPLANTATION OF A DIELECTRIC SUBSTRATE 审中-公开用于等离子体沉积离子植入基板的控制装置公开(公告)号：US20120000421A1
公开(公告)日：2012-01-05
申请号：US12829794
申请日：2010-07-02
CPC分类号： H01J37/32935 , C23C14/48 , C23C14/542 , H01J37/32412
摘要： A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a generated plasma in a plasma chamber. The electrode is biased with negative voltage pulses at a potential that is higher than a potential of a substrate or cathode configured to receive ion implantation. The electrode is more negative to give the electrons generated as secondary electrons from the electrode sufficient energy to overcome the negative voltage of the high voltage sheath around the substrate thereby reaching the substrate. These electrons are accelerated toward the substrate to neutralize charge build-up on the substrate.
摘要翻译： 一种用于等离子体浸没离子注入电介质基板的控制装置，其包括设置在等离子体室中产生的等离子体之上的电极。 电极以比被配置为接收离子注入的衬底或阴极的电位高的电位的负电压脉冲偏置。 电极更为负，从而产生的二次电子产生的电子足够的能量来克服基底周围的高电压护套的负电压，从而到达衬底。 这些电子朝向衬底加速，以中和衬底上的电荷积聚。
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公开(公告)号：US07820533B2
公开(公告)日：2010-10-26
申请号：US11676069
申请日：2007-02-16
申请人： Timothy Miller , Vikram Singh
发明人： Timothy Miller , Vikram Singh
IPC分类号： H01L21/26
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/32706
摘要： A method of multi-step plasma doping a substrate includes igniting a plasma from a process gas. A first plasma condition is established for performing a first plasma doping step. The substrate is biased so that ions in the plasma having the first plasma condition impact a surface of the substrate thereby exposing the substrate to a first dose. The first plasma condition transitions to a second plasma condition. The substrate is biased so that ions in the plasma having the second plasma condition impact the surface of the substrate thereby exposing the substrate to a second dose. The first and second plasma conditions are chosen so that the first and second doses combine to achieve a predetermined distribution of dose across at least a portion of the substrate.
摘要翻译： 多级等离子体掺杂衬底的方法包括从处理气体点燃等离子体。 建立第一等离子体条件用于执行第一等离子体掺杂步骤。 衬底被偏置，使得具有第一等离子体状态的等离子体中的离子影响衬底的表面，从而将衬底暴露于第一剂量。 第一等离子体条件转变到第二等离子体条件。 衬底被偏置，使得具有第二等离子体状态的等离子体中的离子冲击衬底的表面，从而将衬底暴露于第二剂量。 选择第一和第二等离子体条件使得第一和第二剂量组合以实现在衬底的至少一部分上的预定剂量分布。
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