-
公开(公告)号：US08728587B2
公开(公告)日：2014-05-20
申请号：US13168649
申请日：2011-06-24
CPC分类号： H01J37/32412 , H01J37/32972
摘要： A plasma processing apparatus and method are disclosed which improve the repeatability of various plasma processes. The actual implanted dose is a function of implant conditions, as well as various other parameters. This method used knowledge of current implant conditions, as well as information about historical data to improve repeatability. In one embodiment, a plasma is created, a first sensing system is used to monitor a composition of the plasma and a second sensing system is used to monitor a total number of ions implanted. Information about plasma composition and dose per pulse is used to control one or more operating parameters in the plasma chamber. In another embodiment, this information is combined with historical data to control one or more operating parameters in the plasma chamber. In another embodiment, the thickness of material on the walls is measured, and used to modify one or more operating parameters.
摘要翻译： 公开了提高各种等离子体工艺的重复性的等离子体处理装置和方法。 实际的植入剂量是植入条件以及各种其他参数的函数。 该方法使用当前植入条件的知识，以及关于历史数据的信息以改善重复性。 在一个实施例中，产生等离子体，第一感测系统用于监测等离子体的组成，第二感测系统用于监测植入的离子的总数。 关于等离子体组成和每脉冲剂量的信息用于控制等离子体室中的一个或多个操作参数。 在另一个实施例中，该信息与历史数据组合以控制等离子体室中的一个或多个操作参数。 在另一个实施例中，测量壁上材料的厚度，并用于修改一个或多个操作参数。
-
2.发明授权Closed loop control and process optimization in plasma doping processes using a time of flight ion detector 有权使用飞行时间离子检测器的等离子体掺杂过程中的闭环控制和工艺优化公开(公告)号：US07586100B2
公开(公告)日：2009-09-08
申请号：US12029710
申请日：2008-02-12
IPC分类号： H01J49/40 , G01N27/26 , H01L21/31 , H01L21/469
CPC分类号： C23C14/48 , C23C14/54 , H01J37/32412 , H01J37/32935 , H01J37/3299
摘要： A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose.
摘要翻译： 使用飞行时间离子检测器控制等离子体掺杂过程的方法包括在靠近支撑衬底的压板的等离子体室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 使用飞行时间离子检测器测量存在于等离子体中的离子的光谱作为离子质量的函数。 用法拉第剂量测定系统测量影响底物的总数离子。 从测量的离子光谱确定植入物轮廓。 从测量的离子总数和计算出的植入物轮廓确定综合剂量。 响应于计算的积分剂量修改至少一个等离子体掺杂参数。
-
公开(公告)号：US08431495B2
公开(公告)日：2013-04-30
申请号：US12832160
申请日：2010-07-08
IPC分类号： H01L21/00
CPC分类号： H01L21/02274 , B05D1/32 , B05D1/62 , C23C16/042
摘要： An apparatus and method are provided which allow the low cost patterned deposition of material onto a workpiece. A stencil mask, having chamfered edges is applied to the surface of the workpiece. The material is then deposited onto the workpiece, such as by PECVD. Because of the chamfered edges, the material thickness is much more uniform than is possible with traditional stencil masks. Stencil masks having a variety of cross sectional patterns are disclosed which improve deposition uniformity.
摘要翻译： 提供了一种装置和方法，其允许材料在工件上的低成本图案化沉积。 将具有倒角边缘的模板掩模施加到工件的表面。 然后将材料沉积到工件上，例如通过PECVD沉积。 由于倒角边缘，材料厚度比传统模板掩模可能更均匀。 公开了具有各种横截面图案的模板掩模，其提高了沉积均匀性。
-
公开(公告)号：US20100098851A1
公开(公告)日：2010-04-22
申请号：US12254496
申请日：2008-10-20
申请人： Shigemi MURAKAWA , Vikram Singh , George Papasouliotis , Joseph C. Olson , Paul J. Murphy , Gary E. Dickerson
发明人： Shigemi MURAKAWA , Vikram Singh , George Papasouliotis , Joseph C. Olson , Paul J. Murphy , Gary E. Dickerson
CPC分类号： C23C16/45544
摘要： Techniques for atomic layer deposition (ALD) are disclosed. In one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.
摘要翻译： 公开了原子层沉积技术（ALD）。 在一个特定的示例性实施例中，这些技术可以被实现为包括堆叠配置中的多个反应器的ALD系统，其中每个反应器包括用于保持目标晶片的晶片保持部分，耦合到多个反应器的气体组件， 被配置为向所述多个反应器中的至少一个提供至少一个气体，以及联接到所述多个反应器并被配置为从所述多个反应器中的所述至少一个反应器排出所述至少一种气体的排气组件。 气体组件还可以包括联接到第一气体入口，第二气体入口和第三气体入口中的每一个的阀组件，其中阀组件构造成选择性地释放第一气体，第二气体， 和第三气体。
-
5.发明申请Method of Plasma Processing with In-Situ Monitoring and Process Parameter Tuning 审中-公开等离子体处理方法采用现场监测和工艺参数调整公开(公告)号：US20070224840A1
公开(公告)日：2007-09-27
申请号：US11687822
申请日：2007-03-19
申请人： Anthony Renau , Vikram Singh , Atul Gupta , Timothy Miller , Edwin Arevalo , George Papasouliotis , Yong Bae Jeon
发明人： Anthony Renau , Vikram Singh , Atul Gupta , Timothy Miller , Edwin Arevalo , George Papasouliotis , Yong Bae Jeon
IPC分类号： H01L21/00 , H01L21/336 , H01L21/22 , H01L21/38
CPC分类号： H01J37/32935 , H01J37/32412 , H01J37/3299 , H01L22/20
摘要： A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.
摘要翻译： 选择等离子体掺杂工艺参数的方法包括确定用于实现至少一种等离子体掺杂条件的配方参数数据库。 从配方参数数据库确定初始配方参数。 进行至少一个等离子体掺杂条件的原位测量。 至少一种等离子体掺杂条件的原位测量与至少一种等离子体掺杂结果相关。 响应于相关性改变至少一个配方参数，以便改进至少一个等离子体掺杂工艺性能度量。
-
6.发明申请Enhanced Etch and Deposition Profile Control Using Plasma Sheath Engineering 有权使用等离子体护套工程的增强蚀刻和沉积轮廓控制公开(公告)号：US20100252531A1
公开(公告)日：2010-10-07
申请号：US12645638
申请日：2009-12-23
IPC分类号： B44C1/22 , C23C16/513
CPC分类号： B44C1/227 , C23C16/045 , C23C16/50 , H01J37/32412 , H01J37/32623 , H01J2237/3344 , H01J2237/3345
摘要： A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
摘要翻译： 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。
-
7.发明授权Enhanced etch and deposition profile control using plasma sheath engineering 有权使用等离子体护套工程的增强蚀刻和沉积轮廓控制公开(公告)号：US08603591B2
公开(公告)日：2013-12-10
申请号：US12645638
申请日：2009-12-23
IPC分类号： H05H1/24
CPC分类号： B44C1/227 , C23C16/045 , C23C16/50 , H01J37/32412 , H01J37/32623 , H01J2237/3344 , H01J2237/3345
摘要： A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
摘要翻译： 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。
-
公开(公告)号：US20120328771A1
公开(公告)日：2012-12-27
申请号：US13168649
申请日：2011-06-24
申请人： George Papasouliotis , Deven Raj , Harold Persing
发明人： George Papasouliotis , Deven Raj , Harold Persing
CPC分类号： H01J37/32412 , H01J37/32972
摘要： A plasma processing apparatus and method are disclosed which improve the repeatability of various plasma processes. The actual implanted dose is a function of implant conditions, as well as various other parameters. This method used knowledge of current implant conditions, as well as information about historical data to improve repeatability. In one embodiment, information about plasma composition and dose per pulse is used to control one or more operating parameters in the plasma chamber. In another embodiment, this information is combined with historical data to control one or more operating parameters in the plasma chamber.
摘要翻译： 公开了提高各种等离子体工艺的重复性的等离子体处理装置和方法。 实际的植入剂量是植入条件以及各种其他参数的函数。 该方法使用当前植入条件的知识，以及关于历史数据的信息以改善重复性。 在一个实施例中，关于等离子体组成和每脉冲剂量的信息用于控制等离子体室中的一个或多个操作参数。 在另一个实施例中，该信息与历史数据组合以控制等离子体室中的一个或多个操作参数。
-
公开(公告)号：US20090227061A1
公开(公告)日：2009-09-10
申请号：US12397596
申请日：2009-03-04
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , Y02E10/547 , Y02P70/521
摘要： Methods of controlling the diffusion of a dopant in a solar cell are disclosed. A second species is used in conjunction with the dopant to modify the diffusion region. For example, phosphorus and boron both diffuse by pairing with interstitial silicon atoms. Thus, by controlling the creation and location of these interstitials, the diffusion rate of the dopant can be controlled. In one embodiment, a heavier element, such as germanium, argon or silicon, is used to create interstitials. Because of the presence of these heavier elements, the dopant diffuses deeper into the substrate. In another embodiment, carbon is implanted. Carbon reduces the number of interstitials, and thus can be used to limit the diffusion of the dopant. In another embodiment, a lighter element, such as helium is used to amorphize the substrate. The crystalline-amorphous interface created limits diffusion of the dopant into the substrate.
摘要翻译： 公开了控制太阳能电池中掺杂剂扩散的方法。 第二种与掺杂剂结合使用以改变扩散区。 例如，磷和硼通过与间隙硅原子配对而扩散。 因此，通过控制这些间隙的产生和位置，可以控制掺杂剂的扩散速率。 在一个实施例中，使用较重的元素，例如锗，氩或硅，以产生间隙。 由于这些较重的元素的存在，掺杂剂扩散到衬底中。 在另一个实施方案中，植入碳。 碳减少了间隙的数量，因此可用于限制掺杂剂的扩散。 在另一个实施方案中，使用诸如氦的较轻元素使基底无定形。 产生的晶体 - 非晶界面限制了掺杂剂到衬底中的扩散。
-
公开(公告)号：US20070087581A1
公开(公告)日：2007-04-19
申请号：US11608522
申请日：2006-12-08
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0228 , C23C16/22 , C23C16/345 , C23C16/452 , C23C16/4554 , H01L21/0217 , H01L21/02274 , H01L21/3141 , H01L21/3185 , H01L21/32155
摘要： A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by a method for forming a strained thin film. The method may comprise supplying a substrate surface with one or more precursor substances having atoms of at least one first species and atoms of at least one second species, thereby forming a layer of the precursor substance on the substrate surface. The method may also comprise exposing the substrate surface to plasma-generated metastable atoms of a third species, wherein the metastable atoms desorb the atoms of the at least one second species from the substrate surface to form an atomic layer of the at least one first species. A desired amount of stress in the atomic layer of the at least one first species may be achieved by controlling one or more parameters in the atomic layer deposition process.
摘要翻译： 公开了一种用于原子层沉积的技术。 在一个特定的示例性实施例中，该技术可以通过用于形成应变薄膜的方法来实现。 该方法可以包括向衬底表面提供一种或多种具有至少一种第一种类的原子和至少一种第二种类的原子的前体物质，由此在衬底表面上形成前体物质层。 该方法还可以包括将基底表面暴露于等离子体产生的第三种类的亚稳原子，其中亚稳原子从底物表面解吸至少一种第二种类的原子以形成至少一种第一种类的原子层 。 可以通过控制原子层沉积工艺中的一个或多个参数来实现至少一种第一种类的原子层中所需的应力量。
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.014 秒)
