发明申请
- 专利标题： SOLID-STATE IMAGING DEVICE COMPRISING THROUGH-ELECTRODE
- 专利标题（中）： 包含电极的固态成像装置
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申请号： US12727564申请日： 2010-03-19
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公开(公告)号： US20100264503A1公开(公告)日： 2010-10-21
- 发明人: Ikuko INOUE , Kenichiro HAGIWARA
- 申请人： Ikuko INOUE , Kenichiro HAGIWARA
- 优先权： JP2009-100068 20090416
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232
摘要：
A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode.
公开/授权文献
- US08476729B2 Solid-state imaging device comprising through-electrode 公开/授权日：2013-07-02
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