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    SOLID-STATE IMAGING DEVICE COMPRISING THROUGH-ELECTRODE
    4.
    发明申请
    SOLID-STATE IMAGING DEVICE COMPRISING THROUGH-ELECTRODE 失效
    包含电极的固态成像装置

    公开(公告)号：US20100264503A1

    公开(公告)日：2010-10-21

    申请号：US12727564

    申请日：2010-03-19

    申请人： Ikuko INOUE ,  Kenichiro HAGIWARA

    发明人： Ikuko INOUE ,  Kenichiro HAGIWARA

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14618 ,  H01L21/743 ,  H01L23/481 ,  H01L24/13 ,  H01L27/14621 ,  H01L27/14627 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01077 ,  H01L2924/01322 ,  H01L2924/12043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

    摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode.

    摘要翻译： 固态成像装置包括成像元件，外部端子，绝缘膜，通孔和第一电极。 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在与半导体衬底的第一主表面相对的第二主表面上。 绝缘膜形成在形成在半导体衬底中的通孔中。 贯通电极形成在通孔中的绝缘膜上并与外部端子电连接。 第一电极形成在半导体衬底的第一主表面上的贯通电极上。 当从垂直于半导体衬底的第一主表面的方向观察时，绝缘膜和半导体衬底接触的外形大于第一电极的外形。

    Apparatus and program for process fault analysis
    5.
    发明申请
    Apparatus and program for process fault analysis 审中-公开
    过程故障分析的装置和程序

    公开(公告)号：US20070180324A1

    公开(公告)日：2007-08-02

    申请号：US11638665

    申请日：2006-12-14

    申请人： Toshikazu Nakamura ,  Shigeru Obayashi ,  Kenichiro Hagiwara ,  Yoshikazu Aikawa

    发明人： Toshikazu Nakamura ,  Shigeru Obayashi ,  Kenichiro Hagiwara ,  Yoshikazu Aikawa

    IPC分类号： G06F11/00

    CPC分类号： G05B23/024 ,  G05B23/0281

    摘要： A process fault analysis apparatus according to the present invention includes a process data editing unit which extracts process features from process data stored in a process data storage unit and stores the process features in a process feature data storage unit, a fault analysis rule data storage unit in which a fault analysis rule for performing fault detection and fault factor analysis from the process features is stored, a fault judgment unit which performs fault detection and fault factor analysis from the process features using the fault analysis rule, and a unit which outputs fault notification information when the fault judgment unit judges that the fault is generated. In the fault factor analysis, a contribution ratio indicating which process feature has how much influence on the fault is determined, and the process feature having the higher contribution ratio is set at the fault factor.

    摘要翻译： 根据本发明的过程故障分析装置包括：处理数据编辑单元，其从存储在过程数据存储单元中的过程数据中提取处理特征，并将过程特征存储在过程特征数据存储单元中，故障分析规则数据存储单元 存储从过程特征执行故障检测和故障因素分析的故障分析规则，故障判断单元，使用故障分析规则从过程特征执行故障检测和故障因子分析，以及输出故障通知的单元 当故障判断单元判断出故障时的信息。 在故障因素分析中，确定哪个过程特征对故障有多大影响的贡献率，并将具有较高贡献率的过程特征设置在故障因素上。

    Semiconductor device including through-electrode
    9.
    发明授权
    Semiconductor device including through-electrode 有权
    包括通孔的半导体装置

    公开(公告)号：US08541820B2

    公开(公告)日：2013-09-24

    申请号：US12822735

    申请日：2010-06-24

    申请人： Yuko Hayasaki ,  Kenichiro Hagiwara

    发明人： Yuko Hayasaki ,  Kenichiro Hagiwara

    IPC分类号： H01L27/14 ,  H01L27/146

    CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14683 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13024

    摘要： According to one embodiment, a semiconductor device includes the following structure. The first insulating film is formed on a first major surface of a semiconductor substrate. The electrode pad is formed in the first insulating film. The electrode pad includes a conductive film. At least a part of the conductive film includes a free region in which the conductive film is not present. The external connection terminal is formed on a second major surface facing the first major surface. The through-electrode is formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad. The first insulating film is present in the free region, and a step, on a through-electrode side, between the first insulating film being present in the free region and the electrode pad is not greater than a thickness of the electrode pad.

    摘要翻译： 根据一个实施例，半导体器件包括以下结构。 第一绝缘膜形成在半导体衬底的第一主表面上。 电极焊盘形成在第一绝缘膜中。 电极焊盘包括导电膜。 导电膜的至少一部分包括不存在导电膜的自由区域。 外部连接端子形成在面向第一主表面的第二主表面上。 贯通电极形成在由半导体衬底的第二主表面侧形成并且到达电极焊盘的通孔中。 第一绝缘膜存在于自由区域中，并且在通孔电极侧的位于自由区域中的第一绝缘膜与电极焊盘之间的台阶不大于电极焊盘的厚度。

    Solid-state imaging device comprising through-electrode
    10.
    发明授权
    Solid-state imaging device comprising through-electrode 失效
    固态成像装置包括通孔

    公开(公告)号：US08476729B2

    公开(公告)日：2013-07-02

    申请号：US12727564

    申请日：2010-03-19

    申请人： Ikuko Inoue ,  Kenichiro Hagiwara

    发明人： Ikuko Inoue ,  Kenichiro Hagiwara

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14618 ,  H01L21/743 ,  H01L23/481 ,  H01L24/13 ,  H01L27/14621 ,  H01L27/14627 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01077 ,  H01L2924/01322 ,  H01L2924/12043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

    摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode.

    摘要翻译： 固态成像装置包括成像元件，外部端子，绝缘膜，通孔和第一电极。 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在与半导体衬底的第一主表面相对的第二主表面上。 绝缘膜形成在形成在半导体衬底中的通孔中。 贯通电极形成在通孔中的绝缘膜上并与外部端子电连接。 第一电极形成在半导体衬底的第一主表面上的贯通电极上。 当从垂直于半导体衬底的第一主表面的方向观察时，绝缘膜和半导体衬底接触的外形大于第一电极的外形。