公开(公告)号：US20110068476A1

公开(公告)日：2011-03-24

申请号：US12875628

申请日：2010-09-03

申请人： Atsuko KAWASAKI ,  Kenichiro Hagiwara ,  Ikuko Inoue ,  Kazutaka Akiyama ,  Itsuko Sakai ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Yoshiteru Koseki ,  Hiroki Neko ,  Koushi Tozuka ,  Kazuhiko Nakadate ,  Takuto Inoue

发明人： Atsuko KAWASAKI ,  Kenichiro Hagiwara ,  Ikuko Inoue ,  Kazutaka Akiyama ,  Itsuko Sakai ,  Mie Matsuo ,  Masahiro Sekiguchi ,  Yoshiteru Koseki ,  Hiroki Neko ,  Koushi Tozuka ,  Kazuhiko Nakadate ,  Takuto Inoue

IPC分类号： H01L23/48 ,  H01L21/762

CPC分类号： H01L27/14683 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L24/13 ,  H01L24/32 ,  H01L27/14618 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12043 ,  H01L2924/3025 ,  H01L2924/00

摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

摘要翻译： 根据一个实施例，公开了一种半导体器件的制造方法。 半导体器件包括具有第一和第二主表面的半导体衬底，以及穿过第一和第二主表面之间的通孔，第一主表面上的焊盘，通孔中的通孔，以及包括 连接部分，以直接连接焊盘和通孔，以及另一个连接部分，以间接连接焊盘和通孔。 该方法包括在第一主表面中形成隔离区，隔离区位于要形成通孔的区域中，并且位于除了形成通孔的区域之外的区域中，形成垫， 以及通过处理所述衬底形成所述通孔以暴露所述衬垫的一部分。

公开(公告)号：US20110062540A1

公开(公告)日：2011-03-17

申请号：US12845194

申请日：2010-07-28

申请人： Mariko SAITO ,  Ikuko Inoue ,  Takeshi Yoshida

发明人： Mariko SAITO ,  Ikuko Inoue ,  Takeshi Yoshida

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14645

摘要： According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.

摘要翻译： 根据一个实施例，固态图像传感器包括：半导体衬底，包括光入射的第一表面和与第一表面相对的第二表面;形成在半导体衬底中的像素区域，并且包括光电转换元件， 将入射光转换为电信号，形成在半导体衬底中的周边区域，并且包括控制像素区域中的元件的操作的电路;多个互连，其形成在堆叠在多个层间绝缘膜 第二表面，并且连接到电路，以及形成在层叠的层间绝缘膜和互连件上的支撑衬底。 形成在最上层的层间绝缘膜中的最上层的一个互连掩埋在最上层的层间绝缘膜中形成的第一沟槽中。

公开(公告)号：US07889255B2

公开(公告)日：2011-02-15

申请号：US11251882

申请日：2005-10-18

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643

摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

摘要翻译： 设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱 的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分 杂质浓度高于光电转换区。 信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

公开(公告)号：US07855406B2

公开(公告)日：2010-12-21

申请号：US11776791

申请日：2007-07-12

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

IPC分类号： H01L31/062

CPC分类号： H01L27/14609

摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.

摘要翻译： 提供了p型外延层和n型外延层已经沉积在p +型衬底上的n / p- / p +衬底。 在n型外延层的表面区域中，形成了光电转换部的n型区域。 此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从衬底表面到达p型外延层。 在芯片切割部分还形成了p型半导体区域，用于将衬底分成各个器件，从衬底表面到达p型外延层。

公开(公告)号：US20100264503A1

公开(公告)日：2010-10-21

申请号：US12727564

申请日：2010-03-19

申请人： Ikuko INOUE ,  Kenichiro HAGIWARA

发明人： Ikuko INOUE ,  Kenichiro HAGIWARA

IPC分类号： H01L31/0232

CPC分类号： H01L27/14618 ,  H01L21/743 ,  H01L23/481 ,  H01L24/13 ,  H01L27/14621 ,  H01L27/14627 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01077 ,  H01L2924/01322 ,  H01L2924/12043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode.

摘要翻译： 固态成像装置包括成像元件，外部端子，绝缘膜，通孔和第一电极。 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在与半导体衬底的第一主表面相对的第二主表面上。 绝缘膜形成在形成在半导体衬底中的通孔中。 贯通电极形成在通孔中的绝缘膜上并与外部端子电连接。 第一电极形成在半导体衬底的第一主表面上的贯通电极上。 当从垂直于半导体衬底的第一主表面的方向观察时，绝缘膜和半导体衬底接触的外形大于第一电极的外形。

公开(公告)号：US07808064B2

公开(公告)日：2010-10-05

申请号：US12508293

申请日：2009-07-23

申请人： Atsuko Kawasaki ,  Mie Matsuo ,  Ikuko Inoue ,  Masayuki Ayabe ,  Masahiro Sekiguchi ,  Kazumasa Tanida

发明人： Atsuko Kawasaki ,  Mie Matsuo ,  Ikuko Inoue ,  Masayuki Ayabe ,  Masahiro Sekiguchi ,  Kazumasa Tanida

IPC分类号： H01L31/02

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H04N5/2257

摘要： An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.

摘要翻译： 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在半导体衬底的第二主表面上。 在形成在半导体衬底中的通孔中形成通孔电极。 第一电极焊盘形成在第一主表面中的通孔电极上。 在第一电极焊盘和第一主表面上形成层间绝缘膜。 在层间绝缘膜上形成第二电极焊盘。 在第二电极焊盘和层间绝缘膜上形成钝化膜，并且具有露出第二电极焊盘的一部分的开口。 当在垂直于半导体衬底的表面的方向观察时，在不与开口重叠的区域中，在第一和第二电极焊盘之间形成接触插塞。

公开(公告)号：US07709870B2

公开(公告)日：2010-05-04

申请号：US11558200

申请日：2006-11-09

申请人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

发明人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14634 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

摘要翻译： 固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个 光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体 层，形成在第一N型半导体层上。 固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

公开(公告)号：US20100096677A1

公开(公告)日：2010-04-22

申请号：US12580456

申请日：2009-10-16

申请人： Ikuko Inoue

发明人： Ikuko Inoue

IPC分类号： H01L31/112 ,  H01L31/0232 ,  H04N5/335

CPC分类号： H01L27/14623 ,  H01L27/1463 ,  H01L27/1464 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a backside-illuminated solid-state image pickup device capable of allowing peripheral circuits to produce stable waveforms and thereby achieving image characteristics with less noise, the device including: a first-conductivity-type semiconductor layer having a first principal surface and a second principal surface opposed to the first principal surface and also having a pixel area and an analog circuit area; a first P type area formed to lie between the second principal surface and the first principal surface in the analog circuit area; a metal layer formed at least partially on the second principal surface of the first P type area; a VSS electrode electrically connected to the metal layer; a photo-conversion area formed in the pixel area and used to accumulate electric charges generated by photoelectric conversion; and a microlens provided on the second principal surface in the pixel area so as to correspond to the photo-conversion area.

摘要翻译： 本发明提供一种能够允许外围电路产生稳定波形从而实现噪声较小的图像特性的背面照明固体摄像装置，该装置包括：具有第一主表面和第二主表面的第一导电型半导体层 主表面与第一主表面相对并且还具有像素区域和模拟电路区域; 第一P型区域，形成为位于模拟电路区域中的第二主表面和第一主表面之间; 至少部分地形成在所述第一P型区域的所述第二主表面上的金属层; 电连接到所述金属层的VSS电极; 形成在像素区域中并用于累积由光电转换产生的电荷的光转换区域; 以及设置在像素区域中的第二主表面上以对应于光转换区域的微透镜。

公开(公告)号：US20080272455A1

公开(公告)日：2008-11-06

申请号：US11874479

申请日：2007-10-18

申请人： Ikuko Inoue

发明人： Ikuko Inoue

IPC分类号： H01L31/103

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14656 ,  H01L31/03529 ,  H01L51/5237

摘要： An n/p semiconductor substrate is formed in such a manner that an n type semiconductor layer is deposited on a p+ semiconductor substrate. An imaging area including a plurality of n type semiconductor regions making photoelectric conversion and a plurality of p type semiconductor region for isolation formed around the n type semiconductor regions, is formed in the n/p semiconductor substrate. The n type semiconductor layer is divided into an upper layer and a lower layer. A second n type semiconductor region is formed to connect to the p+ type semiconductor substrate from a surface of the n/p semiconductor substrate in a peripheral region of the imaging area.

摘要翻译： 以n型半导体层沉积在p + +半导体衬底上的方式形成n / p半导体衬底。 在n / p半导体衬底中形成包括形成光电转换的多个n型半导体区域和在n型半导体区域周围形成的用于隔离的多个p型半导体区域的成像区域。 n型半导体层分为上层和下层。 形成第二n型半导体区域，以在成像区域的外围区域中从n / p半导体衬底的表面连接到p + +型半导体衬底。

公开(公告)号：US20060163684A1

公开(公告)日：2006-07-27

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.