发明申请
US20100270622A1 Semiconductor Device Having a Strain Inducing Sidewall Spacer and a Method of Manufacture Therefor
审中-公开
具有应变诱导侧壁间隔物的半导体器件及其制造方法
- 专利标题： Semiconductor Device Having a Strain Inducing Sidewall Spacer and a Method of Manufacture Therefor
- 专利标题（中）： 具有应变诱导侧壁间隔物的半导体器件及其制造方法
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申请号： US12831815申请日： 2010-07-07
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公开(公告)号： US20100270622A1公开(公告)日： 2010-10-28
- 发明人: Mahalingam NANDAKUMAR , Wayne A. BATHER , Narendra Singh MEHTA , Lahir Shaik ADAM
- 申请人： Mahalingam NANDAKUMAR , Wayne A. BATHER , Narendra Singh MEHTA , Lahir Shaik ADAM
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/28 ; H01L21/336
摘要：
The present invention provides a method for manufacturing a semiconductor device as well as a semiconductor device. The method, among other steps, may include forming a gate structure over a substrate, and forming a strain inducing sidewall spacer proximate a sidewall of the gate structure, the strain inducing sidewall configured to introduce strain in a channel region below the gate structure.
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