发明申请
- 专利标题： Systems and Methods for Nanowire Growth and Manufacturing
- 专利标题（中）： 纳米线生长和制造的系统和方法
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申请号： US12236209申请日： 2008-09-23
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公开(公告)号： US20100279513A1公开(公告)日： 2010-11-04
- 发明人: Chunming Niu , Jay L. Goldman , Xiangfeng Duan , Vijendra Sahi
- 申请人： Chunming Niu , Jay L. Goldman , Xiangfeng Duan , Vijendra Sahi
- 申请人地址： US CA Palo Alto
- 专利权人： NANOSYS, INC.
- 当前专利权人： NANOSYS, INC.
- 当前专利权人地址： US CA Palo Alto
- 主分类号： H01L21/46
- IPC分类号： H01L21/46 ; B05D1/38 ; C23C16/50 ; C23C16/44 ; B05D3/10 ; C23C14/34
摘要：
The present invention is directed to compositions of matter, systems, and methods to manufacture nanowires. In an embodiment, a buffer layer is placed on a nanowire growth substrate and catalytic nanoparticles are added to form a catalytic-coated nanowire growth substrate. Methods to develop and use this catalytic-coated nanowire growth substrate are disclosed. In a further aspect of the invention, in an embodiment a nanowire growth system using a foil roller to manufacture nanowires is provided.
公开/授权文献
- US07985454B2 Systems and methods for nanowire growth and manufacturing 公开/授权日：2011-07-26
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