公开(公告)号：US20110201984A1

公开(公告)日：2011-08-18

申请号：US13096919

申请日：2011-04-28

申请人： Robert S. Dubrow ,  Lawrence A. Bock ,  R. Hugh Daniels ,  Veeral D. Hardev ,  Chunming Niu ,  Vijendra Sahi

发明人： Robert S. Dubrow ,  Lawrence A. Bock ,  R. Hugh Daniels ,  Veeral D. Hardev ,  Chunming Niu ,  Vijendra Sahi

IPC分类号： A61L15/58

CPC分类号： A61L31/10 ,  A61F13/02 ,  A61L27/34 ,  A61L2400/12 ,  A61L2420/04 ,  A61N1/05 ,  B82Y30/00 ,  Y10S977/762 ,  Y10S977/764 ,  Y10S977/773 ,  Y10S977/811 ,  Y10S977/813 ,  Y10S977/90 ,  Y10S977/904 ,  Y10S977/906 ,  Y10T428/12111 ,  Y10T428/249924 ,  Y10T428/29

摘要： This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.

摘要翻译： 本发明提供了新颖的纳米纤维增强表面积基材和包括用于各种医疗装置的这种基底的结构，以及用于这种基底和医疗装置的方法和用途。 在一个具体实施例中，公开了用于增强医疗装置植入物表面上的细胞功能的方法，其通常包括提供包括在其上的多个纳米纤维（例如，纳米线）的医疗装置植入物，并将医疗装置植入物暴露于诸如成骨细胞 。

公开(公告)号：US07985454B2

公开(公告)日：2011-07-26

申请号：US12236209

申请日：2008-09-23

申请人： Chunming Niu ,  Jay L. Goldman ,  Xiangfeng Duan ,  Vijendra Sahi

发明人： Chunming Niu ,  Jay L. Goldman ,  Xiangfeng Duan ,  Vijendra Sahi

IPC分类号： B05D1/38

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B32/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is directed to compositions of matter, systems, and methods to manufacture nanowires. In an embodiment, a method to produce a catalytic-coated nanowire growth substrate for nanowire growth is disclosed which comprises: (a) depositing a buffer layer on a substrate; (b) treating the buffer layer with boiled water or steam to enhance interactions between the buffer layer and catalyst particles; and (c) depositing catalytic particles on a surface of the buffer layer. Methods to develop and use this catalytic-coated nanowire growth substrate are disclosed.

摘要翻译： 本发明涉及制备纳米线的物质，体系和方法的组合物。 在一个实施方案中，公开了一种制备用于纳米线生长的催化涂覆的纳米线生长衬底的方法，其包括：（a）在衬底上沉积缓冲层; （b）用开水或蒸汽处理缓冲层以增强缓冲层和催化剂颗粒之间的相互作用; 和（c）在缓冲层的表面上沉积催化剂颗粒。 公开了开发和使用该催化涂覆的纳米线生长衬底的方法。

公开(公告)号：US20080293244A1

公开(公告)日：2008-11-27

申请号：US12186405

申请日：2008-08-05

申请人： Xiangfeng Duan ,  Hugh Daniels ,  Chunming Niu ,  Vijendra Sahi ,  James Hamilton ,  Linda T. Romano

发明人： Xiangfeng Duan ,  Hugh Daniels ,  Chunming Niu ,  Vijendra Sahi ,  James Hamilton ,  Linda T. Romano

IPC分类号： H01L21/44

CPC分类号： H01L51/0048 ,  B01J23/52 ,  B81B2203/0361 ,  B81B2207/015 ,  B81C3/005 ,  B81C99/008 ,  B81C2203/057 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11B5/743 ,  G11C2213/81 ,  H01L29/7869 ,  H01L51/0001 ,  H01L51/0595 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/858 ,  Y10S977/89 ,  H01L2924/00

摘要： Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and positioned nanostructures on surfaces. Also provided are populations of positioned and/or oriented nanostructures, devices that include populations of positioned and/or oriented nanostructures, systems for positioning and/or orienting nanostructures, and related devices, systems and methods.

摘要翻译： 在表面上定位和取向纳米结构，特别是纳米线的方法用于随后的使用或整合。 该方法单独使用基于掩模的工艺，或者与纳米结构的基于流动的对准组合以在表面上提供定向和定位的纳米结构。 还提供了定位和/或定向的纳米结构的群体，包括定位和/或定向纳米结构的群体，用于定位和/或取向纳米结构的系统以及相关设备，系统和方法。

公开(公告)号：US07339184B2

公开(公告)日：2008-03-04

申请号：US11117707

申请日：2005-04-29

申请人： Linda T. Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Stephen A. Empedocles ,  Jay L. Goldman ,  James M. Hamilton ,  David L. Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik C. Scher ,  David P. Stumbo ,  Jeffery A. Whiteford

发明人： Linda T. Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Stephen A. Empedocles ,  Jay L. Goldman ,  James M. Hamilton ,  David L. Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik C. Scher ,  David P. Stumbo ,  Jeffery A. Whiteford

IPC分类号： H01L29/00

CPC分类号： C30B29/605 ,  B82Y10/00 ,  C30B11/12 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  Y10S977/762 ,  Y10S977/938 ,  Y10T428/139 ,  Y10T428/2902 ,  Y10T428/2949

摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

摘要翻译： 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。

公开(公告)号：US20070012980A1

公开(公告)日：2007-01-18

申请号：US11490637

申请日：2006-07-21

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US20050279274A1

公开(公告)日：2005-12-22

申请号：US11103642

申请日：2005-04-12

申请人： Chunming Niu ,  Jay Goldman ,  Xiangfeng Duan ,  Vijendra Sahi

发明人： Chunming Niu ,  Jay Goldman ,  Xiangfeng Duan ,  Vijendra Sahi

IPC分类号： C01B31/02 ,  H01L21/322

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B32/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is directed to compositions of matter, systems, and methods to manufacture nanowires. In an embodiment, a buffer layer is placed on a nanowire growth substrate and catalytic nanoparticles are added to form a catalytic-coated nanowire growth substrate. Methods to develop and use this catalytic-coated nanowire growth substrate are disclosed. In a further aspect of the invention, in an embodiment a nanowire growth system using a foil roller to manufacture nanowires is provided.

摘要翻译： 本发明涉及制备纳米线的物质，体系和方法的组合物。 在一个实施方案中，将缓冲层放置在纳米线生长衬底上并加入催化纳米颗粒以形成催化涂覆的纳米线生长衬底。 公开了开发和使用该催化涂覆的纳米线生长衬底的方法。 在本发明的另一方面，在一个实施方案中，提供了使用箔辊制造纳米线的纳米线生长系统。

公开(公告)号：US07932511B2

公开(公告)日：2011-04-26

申请号：US11681058

申请日：2007-03-01

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L29/06

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US20100167512A1

公开(公告)日：2010-07-01

申请号：US12720125

申请日：2010-03-09

申请人： Yaoling Pan ,  Jian Chen ,  Francisco Leon ,  Shahriar Mostarshed ,  Linda T. Romano ,  Vijendra Sahi ,  David P. Stumbo

发明人： Yaoling Pan ,  Jian Chen ,  Francisco Leon ,  Shahriar Mostarshed ,  Linda T. Romano ,  Vijendra Sahi ,  David P. Stumbo

IPC分类号： H01L21/22

CPC分类号： H01L29/0665 ,  B81C1/00698 ,  B81C2201/0173 ,  B82Y10/00 ,  H01L21/2256 ,  H01L21/268 ,  H01L29/0673

摘要： Methods of doping nanostructures, such as nanowires, are disclosed. The methods provide a variety of approaches for improving existing methods of doping nanostructures. The embodiments include the use of a sacrificial layer to promote uniform dopant distribution within a nanostructure during post-nanostructure synthesis doping. In another embodiment, a high temperature environment is used to anneal nanostructure damage when high energy ion implantation is used. In another embodiment rapid thermal annealing is used to drive dopants from a dopant layer on a nanostructure into the nanostructure. In another embodiment a method for doping nanowires on a plastic substrate is provided that includes depositing a dielectric stack on a plastic substrate to protect the plastic substrate from damage during the doping process. An embodiment is also provided that includes selectively using high concentrations of dopant materials at various times in synthesizing nanostructures to realize novel crystallographic structures within the resulting nanostructure.

摘要翻译： 公开了掺杂纳米结构的方法，例如纳米线。 该方法提供了改进现有掺杂纳米结构方法的各种方法。 这些实施方案包括在后纳米结构合成掺杂期间使用牺牲层来促进纳米结构内的均匀掺杂剂分布。 在另一个实施例中，当使用高能离子注入时，使用高温环境退火纳米结构损伤。 在另一个实施方案中，使用快速热退火来将掺杂剂从纳米结构上的掺杂剂层驱动到纳米结构中。 在另一个实施例中，提供了一种在塑料衬底上掺杂纳米线的方法，其包括在塑料衬底上沉积电介质叠层以保护塑料衬底免于在掺杂过程期间损坏。 还提供了一种实施方案，其包括在合成纳米结构中在不同时间选择性地使用高浓度的掺杂剂材料以在所得纳米结构内实现新的晶体结构。

公开(公告)号：US20090192429A1

公开(公告)日：2009-07-30

申请号：US12329431

申请日：2008-12-05

申请人： R. Hugh Daniels ,  Robert S. Dubrow ,  Robert Enzerink ,  Esther Li ,  Vijendra Sahi ,  Jay L. Goldman ,  J. Wallace Parce

发明人： R. Hugh Daniels ,  Robert S. Dubrow ,  Robert Enzerink ,  Esther Li ,  Vijendra Sahi ,  Jay L. Goldman ,  J. Wallace Parce

IPC分类号： A61F13/00 ,  A61B17/064

CPC分类号： A61F13/00034 ,  A61B17/0057 ,  A61B17/064 ,  A61B2017/00601 ,  A61B2017/00884 ,  A61B2017/00893 ,  A61F13/00008 ,  A61F13/00991 ,  A61F13/36 ,  A61F2013/00472 ,  A61F2013/0054 ,  A61F2013/00744 ,  A61F2013/00927 ,  A61F2013/00931 ,  A61L15/18 ,  A61L15/42 ,  A61L17/145 ,  A61L26/0004 ,  A61L26/0095 ,  A61L31/082 ,  A61L31/128 ,  A61L2400/04 ,  A61L2400/12 ,  D06M23/08

摘要： Methods, systems, and apparatuses for nanomaterial-enhanced hemostatic medical devices are provided. Hemostatic materials and structures are provided that induce coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause. The hemostatic materials and structures may incorporate nanostructures and/or further hemostatic elements such as polymers and/or glass beads. The hemostatic materials and structures may be resorbable. Example embodiments include hemostatic bandages, hemostatic plugs, and hemostatic formulations.

摘要翻译： 提供了纳米材料增强型止血医疗装置的方法，系统和装置。 提供止血材料和结构，其在创伤，外科手术，溃疡或其他原因引起的伤口/开口处引起血液凝血。 止血材料和结构可以结合纳米结构和/或其它止血元件，例如聚合物和/或玻璃珠。 止血材料和结构可以是可再吸收的。 示例性实施例包括止血绷带，止血塞和止血配方。

公开(公告)号：US07427328B2

公开(公告)日：2008-09-23

申请号：US11602783

申请日：2006-11-21

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： B05C5/00 ,  B05B7/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。