-
公开(公告)号：US07985454B2
公开(公告)日：2011-07-26
申请号：US12236209
申请日：2008-09-23
申请人： Chunming Niu , Jay L. Goldman , Xiangfeng Duan , Vijendra Sahi
发明人： Chunming Niu , Jay L. Goldman , Xiangfeng Duan , Vijendra Sahi
IPC分类号： B05D1/38
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B32/18 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to compositions of matter, systems, and methods to manufacture nanowires. In an embodiment, a method to produce a catalytic-coated nanowire growth substrate for nanowire growth is disclosed which comprises: (a) depositing a buffer layer on a substrate; (b) treating the buffer layer with boiled water or steam to enhance interactions between the buffer layer and catalyst particles; and (c) depositing catalytic particles on a surface of the buffer layer. Methods to develop and use this catalytic-coated nanowire growth substrate are disclosed.
摘要翻译： 本发明涉及制备纳米线的物质，体系和方法的组合物。 在一个实施方案中，公开了一种制备用于纳米线生长的催化涂覆的纳米线生长衬底的方法，其包括：（a）在衬底上沉积缓冲层; （b）用开水或蒸汽处理缓冲层以增强缓冲层和催化剂颗粒之间的相互作用; 和（c）在缓冲层的表面上沉积催化剂颗粒。 公开了开发和使用该催化涂覆的纳米线生长衬底的方法。
-
公开(公告)号：US07339184B2
公开(公告)日：2008-03-04
申请号：US11117707
申请日：2005-04-29
申请人： Linda T. Romano , Jian Chen , Xiangfeng Duan , Robert S. Dubrow , Stephen A. Empedocles , Jay L. Goldman , James M. Hamilton , David L. Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik C. Scher , David P. Stumbo , Jeffery A. Whiteford
发明人： Linda T. Romano , Jian Chen , Xiangfeng Duan , Robert S. Dubrow , Stephen A. Empedocles , Jay L. Goldman , James M. Hamilton , David L. Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik C. Scher , David P. Stumbo , Jeffery A. Whiteford
IPC分类号： H01L29/00
CPC分类号： C30B29/605 , B82Y10/00 , C30B11/12 , H01L21/02439 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0048 , Y10S977/762 , Y10S977/938 , Y10T428/139 , Y10T428/2902 , Y10T428/2949
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
摘要翻译： 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。
-
公开(公告)号：US07135728B2
公开(公告)日：2006-11-14
申请号：US11106340
申请日：2005-04-13
申请人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
-
公开(公告)号：US07233041B2
公开(公告)日：2007-06-19
申请号：US11490637
申请日：2006-07-21
申请人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
-
公开(公告)号：US07064372B2
公开(公告)日：2006-06-20
申请号：US11004380
申请日：2004-12-03
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/94 , H01L29/76
CPC分类号： H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
-
公开(公告)号：US07932511B2
公开(公告)日：2011-04-26
申请号：US11681058
申请日：2007-03-01
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号： H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。
-
公开(公告)号：US07427328B2
公开(公告)日：2008-09-23
申请号：US11602783
申请日：2006-11-21
申请人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。
-
公开(公告)号：US07851841B2
公开(公告)日：2010-12-14
申请号：US11760382
申请日：2007-06-08
申请人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。
-
公开(公告)号：US20100279513A1
公开(公告)日：2010-11-04
申请号：US12236209
申请日：2008-09-23
申请人： Chunming Niu , Jay L. Goldman , Xiangfeng Duan , Vijendra Sahi
发明人： Chunming Niu , Jay L. Goldman , Xiangfeng Duan , Vijendra Sahi
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B32/18 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to compositions of matter, systems, and methods to manufacture nanowires. In an embodiment, a buffer layer is placed on a nanowire growth substrate and catalytic nanoparticles are added to form a catalytic-coated nanowire growth substrate. Methods to develop and use this catalytic-coated nanowire growth substrate are disclosed. In a further aspect of the invention, in an embodiment a nanowire growth system using a foil roller to manufacture nanowires is provided.
摘要翻译： 本发明涉及制备纳米线的物质，体系和方法的组合物。 在一个实施方案中，将缓冲层放置在纳米线生长衬底上并加入催化纳米颗粒以形成催化涂覆的纳米线生长衬底。 公开了开发和使用该催化涂覆的纳米线生长衬底的方法。 在本发明的另一方面，在一个实施方案中，提供了使用箔辊制造纳米线的纳米线生长系统。
-
公开(公告)号：US20100155696A1
公开(公告)日：2010-06-24
申请号：US11681058
申请日：2007-03-01
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。
-
-
-
-
-
-
-
-
-
搜索结果
93 条记录 (耗时 0.036 秒)