发明申请
US20100300506A1 LOW-COST HIGH-EFFICIENCY SOLAR MODULE USING EPITAXIAL SI THIN-FILM ABSORBER AND DOUBLE-SIDED HETEROJUNCTION SOLAR CELL WITH INTEGRATED MODULE FABRICATION
有权
低成本高效太阳能模块，采用外延薄膜绝缘体和双面绝缘太阳能电池，具有集成模块制造
- 专利标题： LOW-COST HIGH-EFFICIENCY SOLAR MODULE USING EPITAXIAL SI THIN-FILM ABSORBER AND DOUBLE-SIDED HETEROJUNCTION SOLAR CELL WITH INTEGRATED MODULE FABRICATION
- 专利标题（中）： 低成本高效太阳能模块，采用外延薄膜绝缘体和双面绝缘太阳能电池，具有集成模块制造
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申请号： US12476991申请日： 2009-06-02
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公开(公告)号： US20100300506A1公开(公告)日： 2010-12-02
- 发明人: Jiunn Benjamin Heng , Chentao Yu , Zheng Xu , Jianming Fu , Peijun Ding
- 申请人： Jiunn Benjamin Heng , Chentao Yu , Zheng Xu , Jianming Fu , Peijun Ding
- 申请人地址： US CA Fremont
- 专利权人： SIERRA SOLAR POWER, INC.
- 当前专利权人： SIERRA SOLAR POWER, INC.
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L31/042
- IPC分类号： H01L31/042 ; H01L31/00 ; H01L31/18
摘要：
One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.
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