HIGH EFFICIENCY LOW COST CRYSTALLINE-SI THIN FILM SOLAR MODULE
    3.
    发明申请
    HIGH EFFICIENCY LOW COST CRYSTALLINE-SI THIN FILM SOLAR MODULE 审中-公开
    高效低成本晶体薄膜太阳能模块

    公开(公告)号:US20100300507A1

    公开(公告)日:2010-12-02

    申请号:US12566459

    申请日:2009-09-24

    摘要: One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

    摘要翻译: 本发明的一个实施例提供了一种双面异质结太阳能电池模块。 太阳能电池包括前侧玻璃盖,位于前侧玻璃盖下方的背面盖以及位于前侧玻璃罩和后侧玻璃罩之间的若干太阳能电池。 每个太阳能电池包括位于前侧玻璃盖下方的半导体多层结构,包括:前侧电极栅格,位于前侧电极下方的重掺杂非晶Si(a-Si)第一层,轻掺杂晶体Si层 c-Si),以及位于轻掺杂的c-Si层下方的重掺杂c-Si层。 太阳能电池还包括位于多层结构下方的第二层重掺杂a-Si层; 以及位于重掺杂a-Si的第二层下方的背面电极。

    SOLAR CELL WITH SHADE-FREE FRONT ELECTRODE
    4.
    发明申请
    SOLAR CELL WITH SHADE-FREE FRONT ELECTRODE 审中-公开
    太阳能电池与无电镀前电极

    公开(公告)号:US20110277816A1

    公开(公告)日:2011-11-17

    申请号:US13048804

    申请日:2011-03-15

    摘要: One embodiment of the present invention provides a solar cell with shade-free front electrode. The solar cell includes a photovoltaic body, a front-side ohmic contact layer situated above the photovoltaic body, a back-side ohmic contact layer situated below the photovoltaic body, a front-side electrode situated above the front-side ohmic contact layer, and a back-side electrode situated below the back-side ohmic contact layer. The front-side electrode includes a plurality of parallel metal grid lines, and the surface of at least one metal grid line is curved, thereby allowing incident light hitting the curved surface to be reflected downward and absorbed by the solar cell surface adjacent to the metal grid line.

    摘要翻译: 本发明的一个实施例提供一种具有无遮蔽的前电极的太阳能电池。 太阳能电池包括光电体,位于光电体上方的前侧欧姆接触层,位于光伏体下方的背面欧姆接触层,位于前侧欧姆接触层上方的前侧电极,以及 位于背侧欧姆接触层下方的背面电极。 前侧电极包括多个平行的金属网格线,并且至少一个金属网格线的表面是弯曲的,从而允许入射到该曲面的入射光向下反射并被靠近金属的太阳能电池表面吸收 网格线。

    SOLAR CELL WITH ELECTROPLATED METAL GRID
    6.
    发明申请
    SOLAR CELL WITH ELECTROPLATED METAL GRID 有权
    带电镀金属网的太阳能电池

    公开(公告)号:US20120060911A1

    公开(公告)日:2012-03-15

    申请号:US13220532

    申请日:2011-08-29

    IPC分类号: H01L31/0224 H01L31/0232

    摘要: One embodiment of the present invention provides a method for fabricating solar cells. During operation, an anti-reflection layer is deposited on top of a semiconductor structure to form a photovoltaic structure, and a front-side electrode grid comprising a metal stack is formed on top of the photovoltaic structure. The metal stack comprises a metal-adhesive layer comprising Ti or Ta, and a conducting layer comprising Cu or Ag situated above the metal-adhesive layer.

    摘要翻译: 本发明的一个实施例提供一种制造太阳能电池的方法。 在操作期间,在半导体结构的顶部上沉积抗反射层以形成光伏结构,并且在光伏结构的顶部上形成包括金属叠层的前侧电极栅格。 金属叠层包括由Ti或Ta构成的金属粘合剂层,以及包含位于金属粘合剂层上方的Cu或Ag的导电层。

    Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
    10.
    发明授权
    Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design 有权
    异质结太阳能电池基于外延晶体硅薄膜在冶金硅基板上的设计

    公开(公告)号:US08283557B2

    公开(公告)日:2012-10-09

    申请号:US12401314

    申请日:2009-03-10

    IPC分类号: H01L31/00

    摘要: One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.

    摘要翻译: 本发明的一个实施例提供了异质结太阳能电池。 太阳能电池包括冶金级Si(MG-Si)衬底,位于MG-Si衬底上方的重掺杂晶体层Si,位于重掺杂晶体Si层上方的轻掺杂晶体层Si, 位于MG-Si衬底背面的背面欧姆接触层,位于重掺杂晶体Si层上方的钝化层,位于钝化层上方的重掺杂非晶Si层(a-Si)层, 位于重掺杂的a-Si层上方的透明导电氧化物(TCO)和位于TCO层上方的前欧姆接触电极。