发明申请
US20110001197A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
审中-公开
制造半导体器件和半导体器件的方法
- 专利标题： METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US12446307申请日： 2007-10-10
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公开(公告)号： US20110001197A1公开(公告)日： 2011-01-06
- 发明人: Noriaki Fukiage , Yoshihiro Kato , Tsunetoshi Arikado
- 申请人： Noriaki Fukiage , Yoshihiro Kato , Tsunetoshi Arikado
- 申请人地址： JP MINATO-KU
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP MINATO-KU
- 优先权： JP2006-285559 20061019; JP2007-238148 20070913
- 国际申请： PCT/JP2007/069716 WO 20071010
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/265
摘要：
A sidewall spacer film or the like is removed without damaging a device structure section. Specifically disclosed is a method for manufacturing a semiconductor device, which comprises a step of forming a first thin film composed of GeCOH or GeCH on a substrate (21) to be processed, a step of removing a part of the first thin film and obtaining a remaining portion (30), and a processing step of performing a certain process on the substrate (21) through the space formed by removing the first thin film.
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