公开(公告)号：US20110001197A1

公开(公告)日：2011-01-06

申请号：US12446307

申请日：2007-10-10

申请人： Noriaki Fukiage ,  Yoshihiro Kato ,  Tsunetoshi Arikado

发明人： Noriaki Fukiage ,  Yoshihiro Kato ,  Tsunetoshi Arikado

IPC分类号： H01L29/78 ,  H01L21/265

CPC分类号： H01L29/6653 ,  C23C16/30 ,  H01L21/28518 ,  H01L21/3146 ,  H01L21/76802 ,  H01L29/665 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A sidewall spacer film or the like is removed without damaging a device structure section. Specifically disclosed is a method for manufacturing a semiconductor device, which comprises a step of forming a first thin film composed of GeCOH or GeCH on a substrate (21) to be processed, a step of removing a part of the first thin film and obtaining a remaining portion (30), and a processing step of performing a certain process on the substrate (21) through the space formed by removing the first thin film.

摘要翻译： 去除侧壁间隔膜等而不损坏器件结构部分。 具体公开了一种制造半导体器件的方法，其包括在待加工的衬底（21）上形成由GeCOH或GeCH组成的第一薄膜的步骤，除去第一薄膜的一部分并获得 剩余部分（30），以及通过去除第一薄膜而形成的空间在基板（21）上进行一定处理的处理步骤。

公开(公告)号：US20100173467A1

公开(公告)日：2010-07-08

申请号：US12601831

申请日：2008-05-19

申请人： Yoshihiro Kato ,  Noriaki Fukiage

发明人： Yoshihiro Kato ,  Noriaki Fukiage

IPC分类号： H01L21/336 ,  H01L21/302 ,  H01L21/314 ,  H01B1/12

CPC分类号： H01L21/02211 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28518 ,  H01L21/31111 ,  H01L21/31604 ,  H01L21/76829 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin film is used in a semiconductor device manufacturing process. The thin film contains silicon, germanium, and oxygen.

摘要翻译： 在半导体器件制造工艺中使用薄膜。 该薄膜含有硅，锗和氧。

公开(公告)号：US07718497B2

公开(公告)日：2010-05-18

申请号：US12130296

申请日：2008-05-30

申请人： Yasushi Akasaka ,  Noriaki Fukiage ,  Yoshihiro Kato ,  Kazuhide Hasebe ,  Pao-Hwa Chou

发明人： Yasushi Akasaka ,  Noriaki Fukiage ,  Yoshihiro Kato ,  Kazuhide Hasebe ,  Pao-Hwa Chou

IPC分类号： H01L21/8234

CPC分类号： H01L21/823864 ,  H01L21/823814

摘要： A semiconductor device manufacturing method includes: forming a sidewall spacer on a sidewall surface of a gate electrode; forming a pair of second conductive type source and drain regions in an active region; covering top surfaces of a semiconductor layer, a device isolation region, the sidewall spacer and the gate electrode with a metal film; reducing resistance of the source and drain regions and the gate electrode partially by making the metal film react with the semiconductor layer and the gate electrode; and removing an unreacted portion of the metal film and the sidewall spacer simultaneously by using an etchant which readily etches the unreacted portion of the metal film and the sidewall spacer while hardly etching the device isolation region, resistance-reduced portions of the gate electrode and resistance-reduced portions of the source and drain regions.

摘要翻译： 半导体器件制造方法包括：在栅电极的侧壁表面上形成侧壁间隔物; 在有源区中形成一对第二导电型源区和漏区; 用金属膜覆盖半导体层的顶表面，器件隔离区，侧壁间隔物和栅电极; 通过使金属膜与半导体层和栅极电极反应，部分地降低源极和漏极区域和栅电极的电阻; 并且通过使用易于蚀刻金属膜和侧壁间隔物的未反应部分的蚀刻剂同时去除金属膜和侧壁间隔物的未反应部分，同时几乎不蚀刻器件隔离区域，栅电极的电阻减少部分和电阻 - 源区和漏区的部分。

公开(公告)号：US20080299728A1

公开(公告)日：2008-12-04

申请号：US12130296

申请日：2008-05-30

申请人： Yasushi Akasaka ,  Noriaki Fukiage ,  Yoshihiro Kato ,  Kazuhide Hasebe ,  Pao-Hwa Chou

发明人： Yasushi Akasaka ,  Noriaki Fukiage ,  Yoshihiro Kato ,  Kazuhide Hasebe ,  Pao-Hwa Chou

IPC分类号： H01L21/8236

CPC分类号： H01L21/823864 ,  H01L21/823814

摘要： A semiconductor device manufacturing method includes: forming a sidewall spacer on a sidewall surface of a gate electrode; forming a pair of second conductive type source and drain regions in an active region; covering top surfaces of a semiconductor layer, a device isolation region, the sidewall spacer and the gate electrode with a metal film; reducing resistance of the source and drain regions and the gate electrode partially by making the metal film react with the semiconductor layer and the gate electrode; and removing an unreacted portion of the metal film and the sidewall spacer simultaneously by using an etchant which readily etches the unreacted portion of the metal film and the sidewall spacer while hardly etching the device isolation region, resistance-reduced portions of the gate electrode and resistance-reduced portions of the source and drain regions.

摘要翻译： 半导体器件制造方法包括：在栅电极的侧壁表面上形成侧壁间隔物; 在有源区中形成一对第二导电型源区和漏区; 用金属膜覆盖半导体层的顶表面，器件隔离区，侧壁间隔物和栅电极; 通过使金属膜与半导体层和栅极电极反应，部分地降低源极和漏极区域和栅电极的电阻; 并且通过使用易于蚀刻金属膜和侧壁间隔物的未反应部分的蚀刻剂同时去除金属膜和侧壁间隔物的未反应部分，同时几乎不蚀刻器件隔离区域，栅电极的电阻减少部分和电阻 - 源区和漏区的部分。

公开(公告)号：US20110008938A1

公开(公告)日：2011-01-13

申请号：US12867823

申请日：2009-02-12

申请人： Yoshihiro Kato ,  Noriaki Fukiage

发明人： Yoshihiro Kato ,  Noriaki Fukiage

IPC分类号： H01L21/8238 ,  H01L21/336 ,  H01L29/06 ,  H01L21/302

CPC分类号： C23C16/56 ,  C23C16/34 ,  C23C16/36 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/823807 ,  H01L21/823835 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6653

摘要： Disclosed is a thin film which is used in the production process of a semiconductor device. The thin film contains germanium, silicon, nitrogen and hydrogen.

摘要翻译： 公开了一种用于半导体器件的制造工艺中的薄膜。 该薄膜含有锗，硅，氮和氢。

公开(公告)号：US07862683B2

公开(公告)日：2011-01-04

申请号：US11292293

申请日：2005-12-02

申请人： Noriaki Fukiage

发明人： Noriaki Fukiage

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/3244

摘要： An apparatus and method for improving the chamber dry cleaning of a PECVD system. The apparatus includes an annular gas ring with multiple outlets for introducing a cleaning gas into the process chamber, and the method includes using the gas ring to introduce a cleaning species from a remote plasma source into the processing chamber.

摘要翻译： 一种用于改进PECVD系统的室干洗的设备和方法。 该装置包括具有用于将清洁气体引入处理室的多个出口的环形气环，并且该方法包括使用气环将清洁物质从远程等离子体源引入到处理室中。

公开(公告)号：US20060046506A1

公开(公告)日：2006-03-02

申请号：US10931272

申请日：2004-09-01

申请人： Noriaki Fukiage

发明人： Noriaki Fukiage

IPC分类号： H01L21/31

CPC分类号： C23C16/4586 ,  H01L21/6831

摘要： A method and apparatus for improving the properties of a deposited film. The method includes depositing a low-k dielectric on a substrate using a plasma-enhanced chemical vapor deposition process and performing a soft de-chucking sequence after depositing the low-k dielectric film using a soft plasma process. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple precursors and process gasses.

摘要翻译： 一种改善沉积膜性能的方法和装置。 该方法包括使用等离子体增强化学气相沉积工艺在衬底上沉积低k电介质，并在使用软等离子体工艺沉积低k电介质膜之后执行软取样顺序。 所述装置包括具有耦合到第一RF源的上电极和耦合到第二RF源的衬底保持器的腔室; 以及用于提供多种前体和工艺气体的喷头。

公开(公告)号：US20050100682A1

公开(公告)日：2005-05-12

申请号：US10702048

申请日：2003-11-06

申请人： Noriaki Fukiage ,  Katherina Babich

发明人： Noriaki Fukiage ,  Katherina Babich

IPC分类号： H01L21/027 ,  H01L21/033 ,  H05H1/24

CPC分类号： H01L21/0276 ,  H01L21/0332

摘要： A method and apparatus for depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process, wherein for at least a part of the deposition of the TERA film, the plasma-enhanced chemical vapor deposition process employs a precursor that reduces reaction with a photoresist. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple process and precursor gasses.

摘要翻译： 一种用于使用等离子体增强化学气相沉积工艺在衬底上沉积具有可调光学和耐蚀刻特性的TERA膜的方法和装置，其中对于至少一部分沉积TERA膜的等离子体增强化学气相沉积 工艺采用减少与光致抗蚀剂反应的前体。 所述装置包括具有耦合到第一RF源的上电极和耦合到第二RF源的衬底保持器的腔室; 以及用于提供多种工艺和前体气体的喷头。

公开(公告)号：US20100086681A1

公开(公告)日：2010-04-08

申请号：US12530028

申请日：2008-02-27

申请人： Hiroyuki Ikuta ,  Noriaki Fukiage

发明人： Hiroyuki Ikuta ,  Noriaki Fukiage

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C14/545 ,  C23C14/228 ,  C23C14/246 ,  C23C14/56 ,  H01L51/001

摘要： Provided is a control device of an evaporating apparatus performing a film forming process on a substrate with a film forming material evaporated from a vapor deposition source, and a storage of the control device stores a plurality of tables each showing a relationship between a deposition rate and a flow rate of a carrier gas. A table selection unit selects a desired table from the plurality of tables stored in the storage based on a processing condition. A deposition controller calculates a deposition rate based on a signal outputted from a QCM. A carrier gas controller controls the flow rate of the carrier gas to obtain a desired deposition rate based on a difference between a target deposition rate and the deposition rate obtained by the deposition controller, with reference to data indicating the relationship between the deposition rate and the flow rate of the carrier gas.

摘要翻译： 本发明提供一种蒸发装置的控制装置，该蒸发装置利用从蒸镀源蒸发的成膜材料在基板上进行成膜处理，并且，控制装置的存储部存储多个表，其各自表示沉积速率和 载气的流量。 表选择单元基于处理条件从存储在存储器中的多个表中选择所需表。 沉积控制器基于从QCM输出的信号计算沉积速率。 参考表示沉积速率和沉积速率之间的关系的数据，载气控制器基于目标沉积速率和由沉积控制器获得的沉积速率之间的差异来控制载气的流速以获得期望的沉积速率 载气流量。

公开(公告)号：US07611758B2

公开(公告)日：2009-11-03

申请号：US10702049

申请日：2003-11-06

申请人： Noriaki Fukiage ,  Katherina Babich

发明人： Noriaki Fukiage ,  Katherina Babich

IPC分类号： H05H1/24

CPC分类号： C23C16/56 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/5096 ,  G03F7/091 ,  H01J2237/3321

摘要： A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing the TERA film using a plasma process. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple precursors and process gasses.

摘要翻译： 一种用于改善沉积的介电膜上的显影后光刻胶轮廓的方法和装置。 该方法包括使用等离子体增强化学气相沉积工艺在衬底上沉积具有可调光学和耐蚀刻特性的TERA膜，并使用等离子体工艺对TERA膜进行后处理。 所述装置包括具有耦合到第一RF源的上电极和耦合到第二RF源的衬底保持器的腔室; 以及用于提供多种前体和工艺气体的喷头。