发明申请
- 专利标题: ATOMIC LAYER GROWING APPARATUS AND THIN FILM FORMING METHOD
- 专利标题(中): 原子层生长装置和薄膜成型方法
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申请号: US12863565申请日: 2009-01-22
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公开(公告)号: US20110008550A1公开(公告)日: 2011-01-13
- 发明人: Kazutoshi Murata , Keisuke Washio
- 申请人: Kazutoshi Murata , Keisuke Washio
- 申请人地址: JP Chuo-ku, Tokyo
- 专利权人: MITSUI ENGINEERING & SHIPBUILDING CO., LTD
- 当前专利权人: MITSUI ENGINEERING & SHIPBUILDING CO., LTD
- 当前专利权人地址: JP Chuo-ku, Tokyo
- 优先权: JP2008-014647 20080125
- 国际申请: PCT/JP2009/000240 WO 20090122
- 主分类号: C23C16/509
- IPC分类号: C23C16/509 ; C23C16/00
摘要:
An atomic layer growing apparatus includes a deposition container, a gas supply unit, and an exhaust unit. In the deposition container, an antenna array and a substrate stage are provided. The antenna array is formed by disposing a plurality of antenna elements in parallel, each of the antenna elements being configured by coating a rod-shaped antenna body with a dielectric material. The antenna array generates plasma using one of an oxidizing gas and a nitriding gas. The substrate is placed on the substrate stage. The gas supply unit alternately supplies the source gas and the oxidizing gas toward the substrate stage from a supply hole made in a sidewall of the deposition container when a film is formed on the substrate. The exhaust unit exhausts the source gas and one of the oxidizing gas and the nitriding gas, which are alternately supplied into the deposition container.
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