发明申请
US20110024823A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH INTRINSIC CHARGE TRAPPING LAYER
有权
具有内置电荷捕获层的非易失性半导体存储器件
- 专利标题： NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH INTRINSIC CHARGE TRAPPING LAYER
- 专利标题（中）： 具有内置电荷捕获层的非易失性半导体存储器件
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申请号： US12633780申请日： 2009-12-08
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公开(公告)号： US20110024823A1公开(公告)日： 2011-02-03
- 发明人: Hau-Yan Lu , Shih-Chen Wang , Ching-Sung Yang
- 申请人： Hau-Yan Lu , Shih-Chen Wang , Ching-Sung Yang
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L29/792
摘要：
A non-volatile semiconductor memory device includes a substrate, a first gate formed on a first region of a surface of the substrate, a second gate formed on a second region of the surface of the substrate, a charge storage layer filled between the first gate and the second gate, a first diffusion region formed on a first side of the charge storage layer, and a second diffusion region formed opposite the charge storage layer from the first diffusion region. The first region and the second region are separated by a distance sufficient for forming a self-aligning charge storage layer therebetween.
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