发明申请
US20110047792A1 WIRE STRUCTURE, METHOD FOR FABRICATING WIRE, THIN FILM TRANSISTOR SUBSTRATE, AND METHOD FOR FABRICATING THIN FILM TRANSISTOR SUBSTRATE
有权
线形结构，制造线，薄膜晶体管衬底的方法和用于制造薄膜晶体管衬底的方法
- 专利标题： WIRE STRUCTURE, METHOD FOR FABRICATING WIRE, THIN FILM TRANSISTOR SUBSTRATE, AND METHOD FOR FABRICATING THIN FILM TRANSISTOR SUBSTRATE
- 专利标题（中）： 线形结构，制造线，薄膜晶体管衬底的方法和用于制造薄膜晶体管衬底的方法
-
申请号： US12942910申请日： 2010-11-09
-
公开(公告)号： US20110047792A1公开(公告)日： 2011-03-03
- 发明人: Je-hun LEE , Chang-oh Jeong , Beom-seok Cho , Yang-ho Bae
- 申请人： Je-hun LEE , Chang-oh Jeong , Beom-seok Cho , Yang-ho Bae
- 优先权： KR10-2005-0064483 20050715
- 主分类号： H01B13/00
- IPC分类号： H01B13/00
摘要：
Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate, and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including copper nitride and a copper conductive layer formed on the barrier layer and including copper or a copper alloy