发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12305890申请日： 2006-06-23
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公开(公告)号： US20110049454A1公开(公告)日： 2011-03-03
- 发明人: Motoyasu Terao , Yuichi Matsui , Tsuyoshi Koga , Nozomu Matsuzaki , Norikatsu Takaura , Yoshihisa Fujisaki , Kenzo Kurotsuchi , Takahiro Morikawa , Yoshitaka Sasago , Junko Ushiyama , Akemi Hirotsune
- 申请人： Motoyasu Terao , Yuichi Matsui , Tsuyoshi Koga , Nozomu Matsuzaki , Norikatsu Takaura , Yoshihisa Fujisaki , Kenzo Kurotsuchi , Takahiro Morikawa , Yoshitaka Sasago , Junko Ushiyama , Akemi Hirotsune
- 国际申请： PCT/JP2006/312640 WO 20060623
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
In a phase-change memory, an interface layer is inserted between a chalcogenide material layer and a plug. The interface layer is arranged so as not to cover the entire interface of a plug-like electrode. When the plug is formed at an upper part than the chalcogenide layer, the degree of integration is increased. The interface layer is formed by carrying out sputtering using an oxide target, or, by forming a metal film by carrying out sputtering using a metal target followed by oxidizing the metal film in an oxidation atmosphere such as oxygen radical, oxygen plasma, etc.
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