发明申请
- 专利标题: STRUCTURE WITH REDUCED FRINGE CAPACITANCE
- 专利标题(中): 结构与减少的FRINGE电容
-
申请号: US12550543申请日: 2009-08-31
-
公开(公告)号: US20110049645A1公开(公告)日: 2011-03-03
- 发明人: Leland Chang , Isaac Lauer , Renee T. Mo , Jeffrey Sleight
- 申请人: Leland Chang , Isaac Lauer , Renee T. Mo , Jeffrey Sleight
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/28
摘要:
A structure includes a substrate and a gate stack disposed on the substrate. The structure also includes a nitride encapsulation layer disposed on a side wall of the gate stack and which has been exposed to a plasma source. The structure also includes at least one other element contacting the nitride encapsulation layer in a region where the nitride encapsulation layer contacts the side wall of the gate stack.
公开/授权文献
- US08247877B2 Structure with reduced fringe capacitance 公开/授权日:2012-08-21