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    STRUCTURE WITH REDUCED FRINGE CAPACITANCE
    1.
    发明申请
    STRUCTURE WITH REDUCED FRINGE CAPACITANCE 有权
    结构与减少的FRINGE电容

    公开(公告)号：US20110049645A1

    公开(公告)日：2011-03-03

    申请号：US12550543

    申请日：2009-08-31

    申请人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey Sleight

    发明人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey Sleight

    IPC分类号： H01L29/78 ,  H01L21/28

    CPC分类号： H01L29/4983 ,  H01L21/28247 ,  H01L29/495 ,  H01L29/4966

    摘要： A structure includes a substrate and a gate stack disposed on the substrate. The structure also includes a nitride encapsulation layer disposed on a side wall of the gate stack and which has been exposed to a plasma source. The structure also includes at least one other element contacting the nitride encapsulation layer in a region where the nitride encapsulation layer contacts the side wall of the gate stack.

    摘要翻译： 一种结构包括衬底和设置在衬底上的栅叠层。 该结构还包括设置在栅极堆叠的侧壁上并已经暴露于等离子体源的氮化物封装层。 该结构还包括在氮化物封装层与栅叠层的侧壁接触的区域中与氮化物封装层接触的至少一个其它元件。

    Structure with reduced fringe capacitance
    2.
    发明授权
    Structure with reduced fringe capacitance 有权
    具有降低的边缘电容的结构

    公开(公告)号：US08247877B2

    公开(公告)日：2012-08-21

    申请号：US12550543

    申请日：2009-08-31

    申请人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey Sleight

    发明人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey Sleight

    IPC分类号： H01L29/78

    CPC分类号： H01L29/4983 ,  H01L21/28247 ,  H01L29/495 ,  H01L29/4966

    摘要： A structure includes a substrate and a gate stack disposed on the substrate. The structure also includes a nitride encapsulation layer disposed on a side wall of the gate stack and which has been exposed to a plasma source. The structure also includes at least one other element contacting the nitride encapsulation layer in a region where the nitride encapsulation layer contacts the side wall of the gate stack.

    摘要翻译： 一种结构包括衬底和设置在衬底上的栅叠层。 该结构还包括设置在栅极堆叠的侧壁上并已经暴露于等离子体源的氮化物封装层。 该结构还包括在氮化物封装层接触栅叠层的侧壁的区域中与氮化物封装层接触的至少一个其它元件。

    Metal High-K Transistor Having Silicon Sidewall For Reduced Parasitic Capacitance, and Process to Fabricate Same
    3.
    发明申请
    Metal High-K Transistor Having Silicon Sidewall For Reduced Parasitic Capacitance, and Process to Fabricate Same 有权
    具有硅侧壁的金属高K晶体管，用于减少寄生电容，以及制造相同的工艺

    公开(公告)号：US20120187506A1

    公开(公告)日：2012-07-26

    申请号：US13432395

    申请日：2012-03-28

    申请人： Leland Chang ,  Jeffrey W. Sleight ,  Isaac Lauer ,  Renee T. Mo

    发明人： Leland Chang ,  Jeffrey W. Sleight ,  Isaac Lauer ,  Renee T. Mo

    IPC分类号： H01L29/78

    CPC分类号： H01L21/823864 ,  H01L21/26586 ,  H01L21/28105 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656

    摘要： A method forms a metal high dielectric constant (MHK) transistor and includes: providing a MHK stack disposed on a substrate, the MHK stack including a first layer of high dielectric constant material, a second overlying layer, and a third overlying layer, selectively removing only the second and third layers, without removing the first layer, to form an upstanding portion of a MHK gate structure; forming a first sidewall layer on sidewalls of the upstanding portion of the MHK gate structure; forming a second sidewall layer on sidewalls of the first sidewall layer; removing a portion of the first layer to form exposed surfaces; forming an offset spacer layer over the second sidewall layer and over the first layer, and forming in the substrate extensions that underlie the first and second sidewall layers and that extend under a portion but not all of the upstanding portion of the MHK gate structure.

    摘要翻译： 一种方法形成金属高介电常数（MHK）晶体管，包括：提供设置在衬底上的MHK堆叠，MHK堆叠包括第一层高介电常数材料，第二覆盖层和第三覆盖层，选择性地去除 仅第二层和第三层，而不去除第一层，以形成MHK栅极结构的直立部分; 在MHK门结构的直立部分的侧壁上形成第一侧壁层; 在所述第一侧壁层的侧壁上形成第二侧壁层; 去除第一层的一部分以形成暴露的表面; 在所述第二侧壁层上并在所述第一层之上形成偏移间隔层，以及在所述第一和第二侧壁层的底部延伸部中形成并且在所述MHK栅极结构的一部分但不是全部直立部分的下方延伸。

    Metal High-K Transistor Having Silicon Sidewall For Reduced Parasitic Capacitance, And Process To Fabricate Same
    4.
    发明申请
    Metal High-K Transistor Having Silicon Sidewall For Reduced Parasitic Capacitance, And Process To Fabricate Same 有权
    具有硅侧壁的金属高K晶体管用于减少寄生电容，以及制造相同的工艺

    公开(公告)号：US20100327376A1

    公开(公告)日：2010-12-30

    申请号：US12880478

    申请日：2010-09-13

    申请人： Leland Chang ,  Jeffrey W. Sleight ,  Isaac Lauer ,  Renee T. Mo

    发明人： Leland Chang ,  Jeffrey W. Sleight ,  Isaac Lauer ,  Renee T. Mo

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L21/823864 ,  H01L21/26586 ,  H01L21/28105 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656

    摘要： A method forms a metal high dielectric constant (MHK) transistor and includes: providing a MHK stack disposed on a substrate, the MHK stack including a first layer of high dielectric constant material, a second overlying layer, and a third overlying layer; selectively removing only the second and third layers, without removing the first layer, to form an upstanding portion of a MHK gate structure; forming a first sidewall layer on sidewalls of the upstanding portion of the MHK gate structure; forming a second sidewall layer on sidewalls of the first sidewall layer; removing a portion of the first layer to form exposed surfaces; forming an offset spacer layer over the second sidewall layer and over the first layer, and forming in the substrate extensions that underlie the first and second sidewall layers and that extend under a portion but not all of the upstanding portion of the MHK gate structure.

    摘要翻译： 一种方法形成金属高介电常数（MHK）晶体管，包括：提供设置在衬底上的MHK堆叠，MHK堆叠包括第一层高介电常数材料，第二覆盖层和第三覆盖层; 选择性地仅去除第二层和第三层，而不去除第一层，以形成MHK栅极结构的直立部分; 在MHK门结构的直立部分的侧壁上形成第一侧壁层; 在所述第一侧壁层的侧壁上形成第二侧壁层; 去除第一层的一部分以形成暴露的表面; 在所述第二侧壁层上并在所述第一层之上形成偏移间隔层，以及在所述第一和第二侧壁层的底部延伸部中形成并且在所述MHK栅极结构的一部分但不是全部直立部分的下方延伸。

    Metal High-K Transistor Having Silicon Sidewall For Reduced Parasitic Capacitance, And Process To Fabricate Same
    5.
    发明申请
    Metal High-K Transistor Having Silicon Sidewall For Reduced Parasitic Capacitance, And Process To Fabricate Same 有权
    具有硅侧壁的金属高K晶体管用于减少寄生电容，以及制造相同的工艺

    公开(公告)号：US20090298275A1

    公开(公告)日：2009-12-03

    申请号：US12539860

    申请日：2009-08-12

    申请人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey W. Sleight

    发明人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey W. Sleight

    IPC分类号： H01L21/28

    CPC分类号： H01L29/517 ,  H01L21/823864 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/6656

    摘要： A method is disclosed to reduce parasitic capacitance in a metal high dielectric constant (MHK) transistor. The method includes forming a MHK gate stack upon a substrate, the MHK gate stack having a bottom layer of high dielectric constant material, a middle layer of metal, and a top layer of one of amorphous silicon or polycrystalline silicon. The method further forms a depleted sidewall layer on sidewalls of the MHK gate stack so as to overlie the middle layer and the top layer, and not the bottom layer. The depleted sidewall layer is one of amorphous silicon or polycrystalline silicon. The method further forms an offset spacer layer over the depleted sidewall layer and over exposed surfaces of the bottom layer.

    摘要翻译： 公开了一种降低金属高介电常数（MHK）晶体管中的寄生电容的方法。 该方法包括在衬底上形成MHK栅极堆叠，MHK栅极堆叠层具有高介电常数材料的底层，中间金属层和非晶硅或多晶硅之一的顶层。 该方法进一步在MHK栅极堆叠的侧壁上形成耗尽的侧壁层，以覆盖中间层和顶层而不是底层。 耗尽的侧壁层是非晶硅或多晶硅之一。 该方法还在耗尽的侧壁层上方和底层的暴露表面之上形成偏移间隔层。

    Process to fabricate a metal high-K transistor having first and second silicon sidewalls for reduced parasitic capacitance
    6.
    发明授权
    Process to fabricate a metal high-K transistor having first and second silicon sidewalls for reduced parasitic capacitance 有权
    制造具有第一和第二硅侧壁以降低寄生电容的金属高K晶体管的工艺

    公开(公告)号：US08216907B2

    公开(公告)日：2012-07-10

    申请号：US12880478

    申请日：2010-09-13

    申请人： Leland Chang ,  Jeffrey W. Sleight ,  Isaac Lauer ,  Renee T. Mo

    发明人： Leland Chang ,  Jeffrey W. Sleight ,  Isaac Lauer ,  Renee T. Mo

    IPC分类号： H01L21/336 ,  H01L21/338 ,  H01L21/8238 ,  H01L21/76 ,  H01L21/3205 ,  H01L21/4763 ,  H01L27/12 ,  H01L21/02 ,  H01L29/78

    CPC分类号： H01L21/823864 ,  H01L21/26586 ,  H01L21/28105 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656

    摘要： A method forms a metal high dielectric constant (MHK) transistor and includes: providing a MHK stack disposed on a substrate, the MHK stack including a first layer of high dielectric constant material, a second overlying layer, and a third overlying layer; selectively removing only the second and third layers, without removing the first layer, to form an upstanding portion of a MHK gate structure; forming a first sidewall layer on sidewalls of the upstanding portion of the MHK gate structure; forming a second sidewall layer on sidewalls of the first sidewall layer; removing a portion of the first layer to form exposed surfaces; forming an offset spacer layer over the second sidewall layer and over the first layer, and forming in the substrate extensions that underlie the first and second sidewall layers and that extend under a portion but not all of the upstanding portion of the MHK gate structure.

    摘要翻译： 一种方法形成金属高介电常数（MHK）晶体管，包括：提供设置在衬底上的MHK堆叠，MHK堆叠包括第一层高介电常数材料，第二覆盖层和第三覆盖层; 选择性地仅去除第二层和第三层，而不去除第一层，以形成MHK栅极结构的直立部分; 在MHK门结构的直立部分的侧壁上形成第一侧壁层; 在所述第一侧壁层的侧壁上形成第二侧壁层; 去除第一层的一部分以形成暴露的表面; 在所述第二侧壁层上并在所述第一层之上形成偏移间隔层，以及在所述第一和第二侧壁层的底部延伸部中形成并且在所述MHK栅极结构的一部分但不是全部直立部分的下方延伸。

    Metal High-K Transistor Having Silicon Sidewall For Reduced Parasitic Capacitance, And Process To Fabricate Same
    7.
    发明申请
    Metal High-K Transistor Having Silicon Sidewall For Reduced Parasitic Capacitance, And Process To Fabricate Same 有权
    具有硅侧壁的金属高K晶体管用于减少寄生电容，以及制造相同的工艺

    公开(公告)号：US20100006956A1

    公开(公告)日：2010-01-14

    申请号：US12539842

    申请日：2009-08-12

    申请人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey W. Sleight

    发明人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey W. Sleight

    IPC分类号： H01L29/78

    CPC分类号： H01L29/517 ,  H01L21/823864 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/6656

    摘要： A method is disclosed to reduce parasitic capacitance in a metal high dielectric constant (MHK) transistor. The method includes forming a MHK gate stack upon a substrate, the MHK gate stack having a bottom layer of high dielectric constant material, a middle layer of metal, and a top layer of one of amorphous silicon or polycrystalline silicon. The method further forms a depleted sidewall layer on sidewalls of the MHK gate stack so as to overlie the middle layer and the top layer, and not the bottom layer. The depleted sidewall layer is one of amorphous silicon or polycrystalline silicon. The method further forms an offset spacer layer over the depleted sidewall layer and over exposed surfaces of the bottom layer.

    摘要翻译： 公开了一种降低金属高介电常数（MHK）晶体管中的寄生电容的方法。 该方法包括在衬底上形成MHK栅极堆叠，MHK栅极堆叠层具有高介电常数材料的底层，中间金属层和非晶硅或多晶硅之一的顶层。 该方法进一步在MHK栅极堆叠的侧壁上形成耗尽的侧壁层，以覆盖中间层和顶层而不是底层。 耗尽的侧壁层是非晶硅或多晶硅之一。 该方法还在耗尽的侧壁层上方和底层的暴露表面之上形成偏移间隔层。

    Metal high-k transistor having silicon sidewall for reduced parasitic capacitance
    8.
    发明授权
    Metal high-k transistor having silicon sidewall for reduced parasitic capacitance 有权
    具有用于降低寄生电容的硅侧壁的金属高k晶体管

    公开(公告)号：US07843007B2

    公开(公告)日：2010-11-30

    申请号：US12539842

    申请日：2009-08-12

    申请人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey W. Sleight

    发明人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey W. Sleight

    IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/3205

    CPC分类号： H01L29/517 ,  H01L21/823864 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/6656

    摘要： A method is disclosed to reduce parasitic capacitance in a metal high dielectric constant (MHK) transistor. The method includes forming a MHK gate stack upon a substrate, the MHK gate stack having a bottom layer of high dielectric constant material, a middle layer of metal, and a top layer of one of amorphous silicon or polycrystalline silicon. The method further forms a depleted sidewall layer on sidewalls of the MHK gate stack so as to overlie the middle layer and the top layer, and not the bottom layer. The depleted sidewall layer is one of amorphous silicon or polycrystalline silicon. The method further forms an offset spacer layer over the depleted sidewall layer and over exposed surfaces of the bottom layer.

    摘要翻译： 公开了一种降低金属高介电常数（MHK）晶体管中的寄生电容的方法。 该方法包括在衬底上形成MHK栅极堆叠，MHK栅极堆叠层具有高介电常数材料的底层，中间金属层和非晶硅或多晶硅之一的顶层。 该方法进一步在MHK栅极堆叠的侧壁上形成耗尽的侧壁层，以覆盖中间层和顶层而不是底层。 耗尽的侧壁层是非晶硅或多晶硅之一。 该方法还在耗尽的侧壁层上方和底层的暴露表面之上形成偏移间隔层。

    Method to reduce parastic capacitance in a metal high dielectric constant (MHK) transistor
    9.
    发明授权
    Method to reduce parastic capacitance in a metal high dielectric constant (MHK) transistor 有权
    降低金属高介电常数（MHK）晶体管中的寄生电容的方法

    公开(公告)号：US07855135B2

    公开(公告)日：2010-12-21

    申请号：US12539860

    申请日：2009-08-12

    申请人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey W. Sleight

    发明人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey W. Sleight

    IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/336

    CPC分类号： H01L29/517 ,  H01L21/823864 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/6656

    摘要： A method is disclosed to reduce parasitic capacitance in a metal high dielectric constant (MHK) transistor. The method includes forming a MHK gate stack upon a substrate, the MHK gate stack having a bottom layer of high dielectric constant material, a middle layer of metal, and a top layer of one of amorphous silicon or polycrystalline silicon. The method further forms a depleted sidewall layer on sidewalls of the MHK gate stack so as to overlie the middle layer and the top layer, and not the bottom layer. The depleted sidewall layer is one of amorphous silicon or polycrystalline silicon. The method further forms an offset spacer layer over the depleted sidewall layer and over exposed surfaces of the bottom layer.

    摘要翻译： 公开了一种降低金属高介电常数（MHK）晶体管中的寄生电容的方法。 该方法包括在衬底上形成MHK栅极堆叠，MHK栅极堆叠层具有高介电常数材料的底层，中间金属层和非晶硅或多晶硅之一的顶层。 该方法进一步在MHK栅极堆叠的侧壁上形成耗尽的侧壁层，以覆盖中间层和顶层而不是底层。 耗尽的侧壁层是非晶硅或多晶硅之一。 该方法还在耗尽的侧壁层上方和底层的暴露表面之上形成偏移间隔层。

    Metal High-K Transistor Having Silicon Sidewall for Reduced Parasitic Capacitance, and Process to Fabricate Same
    10.
    发明申请
    Metal High-K Transistor Having Silicon Sidewall for Reduced Parasitic Capacitance, and Process to Fabricate Same 失效
    具有减少寄生电容的硅侧壁的金属高K晶体管及其制造方法

    公开(公告)号：US20090065876A1

    公开(公告)日：2009-03-12

    申请号：US11852359

    申请日：2007-09-10

    申请人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey W. Sleight

    发明人： Leland Chang ,  Isaac Lauer ,  Renee T. Mo ,  Jeffrey W. Sleight

    IPC分类号： H01L29/78 ,  H01L21/3205

    CPC分类号： H01L29/517 ,  H01L21/823864 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/6656

    摘要： A method is disclosed to reduce parasitic capacitance in a metal high dielectric constant (MHK) transistor. The method includes forming a MHK gate stack upon a substrate, the MHK gate stack having a bottom layer of high dielectric constant material, a middle layer of metal, and a top layer of one of amorphous silicon or polycrystalline silicon. The method further forms a depleted sidewall layer on sidewalls of the MHK gate stack so as to overlie the middle layer and the top layer, and not the bottom layer. The depleted sidewall layer is one of amorphous silicon or polycrystalline silicon. The method further forms an offset spacer layer over the depleted sidewall layer and over exposed surfaces of the bottom layer.

    摘要翻译： 公开了一种降低金属高介电常数（MHK）晶体管中的寄生电容的方法。 该方法包括在衬底上形成MHK栅极堆叠，MHK栅极堆叠层具有高介电常数材料的底层，中间金属层和非晶硅或多晶硅之一的顶层。 该方法进一步在MHK栅极堆叠的侧壁上形成耗尽的侧壁层，以覆盖中间层和顶层而不是底层。 耗尽的侧壁层是非晶硅或多晶硅之一。 该方法还在耗尽的侧壁层上方和底层的暴露表面之上形成偏移间隔层。