发明申请
- 专利标题： Programming Method and Memory Device Using the Same
- 专利标题（中）： 编程方法和使用它的存储设备
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申请号： US12943443申请日： 2010-11-10
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公开(公告)号： US20110055670A1公开(公告)日： 2011-03-03
- 发明人: Chun-Hsiung Hung , Hsin-Yi Ho
- 申请人： Chun-Hsiung Hung , Hsin-Yi Ho
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： G11C11/40
- IPC分类号： G11C11/40 ; G11C7/00 ; G06F11/07
摘要：
A programming method applied to a memory is provided. The memory includes a number of memory cells. The method includes the following steps. A target cell of the memory cells is programmed in response to a first programming command. The target cell is programmed in response to a second programming command.
公开/授权文献
- US08045403B2 Programming method and memory device using the same 公开/授权日：2011-10-25
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