发明申请
US20110070738A1 DOUBLE PATTERNING STRATEGY FOR CONTACT HOLE AND TRENCH IN PHOTOLITHOGRAPHY
有权
用于接触孔的双重图案策略和光刻胶中的TRENCH
- 专利标题： DOUBLE PATTERNING STRATEGY FOR CONTACT HOLE AND TRENCH IN PHOTOLITHOGRAPHY
- 专利标题（中）： 用于接触孔的双重图案策略和光刻胶中的TRENCH
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申请号： US12873429申请日： 2010-09-01
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公开(公告)号： US20110070738A1公开(公告)日： 2011-03-24
- 发明人: Ming-Chung LIANG , Chih-Hao CHEN , Yu-Yu CHEN , Hsin-Yi TSAI
- 申请人： Ming-Chung LIANG , Chih-Hao CHEN , Yu-Yu CHEN , Hsin-Yi TSAI
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method of lithography patterning includes forming a hard mask layer on a material layer and forming a capping layer on the hard mask layer. The capping layer does not react with oxygen gas during a photoresist ashing process. The capping layer is patterned by using a first resist pattern and a second resist pattern as etch masks. After the capping layer is patterned, the hard mask layer is patterned by using the patterned capping layer as an etch mask.
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