发明申请
- 专利标题： NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US12886079申请日： 2010-09-20
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公开(公告)号： US20110073927A1公开(公告)日： 2011-03-31
- 发明人: Takeshi ARAKI , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
- 申请人： Takeshi ARAKI , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/28
摘要：
According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.
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