发明申请
- 专利标题： LITHOGRAPHY PATTERNING METHOD
- 专利标题（中）： 算术绘图方法
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申请号： US12566853申请日： 2009-09-25
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公开(公告)号： US20110076843A1公开(公告)日： 2011-03-31
- 发明人: I-Hsiung Huang , Chin-Hsiang Lin , Heng-Jen Lee , Heng-Hsin Liu
- 申请人： I-Hsiung Huang , Chin-Hsiang Lin , Heng-Jen Lee , Heng-Hsin Liu
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/302
摘要：
A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the substrate; forming a conductive layer over the protective layer; forming a resist layer over the conductive layer; and exposing and developing the resist layer.
公开/授权文献
- US08101530B2 Lithography patterning method 公开/授权日：2012-01-24