发明申请
US20110092072A1 HEATING PLATE WITH PLANAR HEATING ZONES FOR SEMICONDUCTOR PROCESSING
有权
具有平面加热区域的加热板用于半导体加工
- 专利标题： HEATING PLATE WITH PLANAR HEATING ZONES FOR SEMICONDUCTOR PROCESSING
- 专利标题（中）： 具有平面加热区域的加热板用于半导体加工
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申请号： US12582991申请日： 2009-10-21
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公开(公告)号： US20110092072A1公开(公告)日： 2011-04-21
- 发明人: Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
- 申请人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01C17/00 ; H01C17/06 ; B05C13/00 ; H01L21/306 ; C23C14/34
摘要：
A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
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