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    Substrate temperature control by using liquid controlled multizone substrate support
    5.
    发明申请
    Substrate temperature control by using liquid controlled multizone substrate support 审中-公开
    通过使用液体多基质底物支持底物温度控制

    公开(公告)号：US20100116788A1

    公开(公告)日：2010-05-13

    申请号：US12292081

    申请日：2008-11-12

    申请人： Harmeet Singh ,  Keith Comendant

    发明人： Harmeet Singh ,  Keith Comendant

    IPC分类号： B44C1/22 ,  C23F1/08 ,  C23C16/54 ,  C23C14/22 ,  C23C14/34

    CPC分类号： H01L21/67248 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/50 ,  C23C16/52 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6831

    摘要： A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages.

    摘要翻译： 提供了一种用于等离子体处理装置的反应室中的基板支架。 衬底支撑件包括基部构件和覆盖基底构件的传热构件。 传热构件具有多个区域以分别加热和冷却传热构件的每个区域。 静电吸盘覆盖传热部件。 静电卡盘具有用于在等离子体处理装置的反应室中支撑基板的支撑表面。 冷液源和热液体源与每个区域中的流动通道流体连通。 阀装置可操作以通过调节热液体与在流动通道中循环的冷液体的混合比来独立地控制液体的温度。 在另一个实施例中，沿着供应管线和输送管线的加热元件在流动通道中循环之前加热来自液体源的液体。

    Plasma chamber top piece assembly
    6.
    发明授权
    Plasma chamber top piece assembly 有权
    等离子室顶部组件

    公开(公告)号：US09318349B2

    公开(公告)日：2016-04-19

    申请号：US13950040

    申请日：2013-07-24

    申请人： Leonard J. Sharpless ,  Keith Comendant

    发明人： Leonard J. Sharpless ,  Keith Comendant

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/465 ,  H01J37/21 ,  H01J37/32 ,  H01L21/67 ,  C03C15/00 ,  C03C17/00 ,  H01L21/4763

    CPC分类号： H01L21/465 ,  C03C15/00 ,  C03C17/001 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/4763 ,  H01L21/67109

    摘要： A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.

    摘要翻译： 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件，其包括配置为保持基板的卡盘。 等离子体处理系统还包括被配置为产生电磁场以产生用于处理衬底的等离子体的感应线圈; 以及联接到所述底部件的优化的顶部件，所述顶部件还构造成用于加热和冷却系统。 其中，加热和冷却系统通过优化的顶部部件基本上与电磁场屏蔽，并且优化的顶部部件可以基本上由单个人操作。

    Plasma arrestor insert
    7.
    发明授权
    Plasma arrestor insert 有权
    等离子体避雷器插入物

    公开(公告)号：US08503151B2

    公开(公告)日：2013-08-06

    申请号：US12570263

    申请日：2009-09-30

    申请人： Keith Comendant

    发明人： Keith Comendant

    IPC分类号： H01H9/30 ,  H01H73/18

    CPC分类号： H01L21/67069

    摘要： A dielectric arrestor insert for use in a chamber wafer processing system having a gas input line, an arrestor housing and a wafer processing space. The input line is able to provide gas to the arrestor housing. The arrestor housing is able to house the dielectric arrestor insert. The dielectric arrestor insert comprises a gas entry portion, a non-linear channel and a gas exit portion. The gas entry portion is arranged to receive the gas from the input line. The non-linear channel is arranged to deliver the gas from the gas entry portion to the gas exit portion. The gas exit portion is arranged to deliver the gas from the non-linear channel to the wafer processing space.

    摘要翻译： 一种用于具有气体输入管线，避雷器壳体和晶片处理空间的室晶片处理系统中的介电抑制器插入件。 输入线能够向避雷器壳体提供气体。 避雷器壳体能够容纳介电避雷器插入物。 介电抑制器插件包括气体入口部分，非线性通道和气体出口部分。 气体入口部分被布置成从输入管线接收气体。 非线性通道布置成将气体从气体入口部分输送到气体出口部分。 气体出口部分布置成将气体从非线性通道输送到晶片处理空间。

    PLASMA CHAMBER TOP PIECE ASSEMBLY
    8.
    发明申请
    PLASMA CHAMBER TOP PIECE ASSEMBLY 有权
    等离子体顶板组件

    公开(公告)号：US20120043022A1

    公开(公告)日：2012-02-23

    申请号：US12861769

    申请日：2010-08-23

    申请人： Leonard J. Sharpless ,  Keith Comendant

    发明人： Leonard J. Sharpless ,  Keith Comendant

    IPC分类号： C23F1/08 ,  C23C16/50

    CPC分类号： H01L21/465 ,  C03C15/00 ,  C03C17/001 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/4763 ,  H01L21/67109

    摘要： A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate. The plasma processing system also includes a cover covering at least the induction coil and a heating and cooling system. The top piece coupled to the bottom piece and at least partially covered by the cover, the top piece comprising a first shelf, a second shelf, and a wall; the wall being disposed between the first shelf and the second shelf; a cavity being formed between the first shelf and the second shelf, and between the wall and a portion of the cover; the heating and cooling system being disposed inside the cavity; Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the top piece, and the top piece substantially complies with a set of SEMI ergonomic safety standards for a part handled by a single person.

    摘要翻译： 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件，其包括配置为保持基板的卡盘。 等离子体处理系统还包括被配置为产生电磁场的感应线圈，以便产生用于处理衬底的等离子体。 等离子体处理系统还包括至少覆盖感应线圈和加热和冷却系统的盖。 所述顶部件联接到所述底部件并且至少部分地被所述盖子覆盖，所述顶部件包括第一搁板，第二搁板和壁; 所述壁布置在所述第一搁架和所述第二搁架之间; 在所述第一搁板和所述第二搁板之间以及所述壁与所述盖的一部分之间形成空腔; 所述加热和冷却系统设置在所述空腔内; 其中，加热和冷却系统通过顶部件基本上与电磁场屏蔽，并且顶部件基本上符合由单个人处理的部件的一组SEMI符合人体工程学的安全标准。

    Method of manufacturing apparatus for spatial and temporal control of temperature on a substrate
    9.
    发明授权
    Method of manufacturing apparatus for spatial and temporal control of temperature on a substrate 有权
    制造基板温度空间和时间控制装置的方法

    公开(公告)号：US08051556B2

    公开(公告)日：2011-11-08

    申请号：US12232673

    申请日：2008-09-22

    申请人： Anthony J. Ricci ,  Keith Comendant ,  James Tappan

    发明人： Anthony J. Ricci ,  Keith Comendant ,  James Tappan

    IPC分类号： C23C14/50 ,  C23C16/46 ,  H01L21/00

    CPC分类号： H01L21/6833 ,  H01J37/32724 ,  H01J2237/20 ,  H01L21/67103 ,  H01L21/6831 ,  H01L2221/683 ,  H05B3/26 ,  Y10T29/49146 ,  Y10T29/53252 ,  Y10T279/23

    摘要： An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.

    摘要翻译： 用于控制基板的温度的装置具有温度控制的基座，加热器，金属板，电介质材料层。 加热器在与金属板电绝缘的同时热耦合到金属板的下侧。 第一层粘合剂材料将金属板和加热器粘合到温度受控底座的顶部表面。 该粘合剂层具有机械柔性，并具有设计用于平衡加热器的热能和外部工艺的物理性能，以在设备的表面上提供期望的温度图案。 第二层粘合剂材料将介电材料层粘合到金属板的顶表面上。 该第二粘合剂层具有设计成将期望的温度图案转移到设备的表面的物理性质。 介电材料层形成静电夹持机构并支撑基板。

    Methods for measuring dielectric properties of parts
    10.
    发明授权
    Methods for measuring dielectric properties of parts 有权
    测量零件介电性能的方法

    公开(公告)号：US07973539B1

    公开(公告)日：2011-07-05

    申请号：US13030015

    申请日：2011-02-17

    申请人： Jaehyun Kim ,  Arthur H. Sato ,  Keith Comendant ,  Qing Liu ,  Feiyang Wu

    发明人： Jaehyun Kim ,  Arthur H. Sato ,  Keith Comendant ,  Qing Liu ,  Feiyang Wu

    IPC分类号： G01R35/00 ,  G01R31/00

    CPC分类号： G01R27/2641 ,  G01R27/2694 ,  G01R35/005

    摘要： A method is disclosed for calibrating a capacitance of an apparatus for measuring dielectric properties of a part. The apparatus includes an electrically grounded chamber, a lower electrode disposed within the chamber and connected to a radiofrequency (RF) transmission rod, an electrically grounded upper electrode disposed within the chamber above the lower electrode, and a variable capacitor connected to control transmission of RF power through the RF transmission rod to the lower electrode. A method is also disclosed for determining a capacitance of a part through use of the apparatus. A method is also disclosed for determining a dielectric constant of a part through use of the apparatus. A method is also disclosed for determining a loss tangent of a part through use of the apparatus.

    摘要翻译： 公开了一种用于校准用于测量零件的介电特性的装置的电容的方法。 该设备包括电接地室，设置在室内的下电极并连接到射频（RF）传输杆，设置在下电极上方的室内的电接地上电极，以及连接到控制RF 通过RF传输杆向下电极供电。 还公开了一种通过使用该装置来确定零件的电容的方法。 还公开了一种通过使用该装置来确定部件的介电常数的方法。 还公开了一种通过使用该装置来确定零件的损耗角正切的方法。