发明申请
- 专利标题: MANUFACTURING METHOD OF CIRCUIT STRUCTURE
- 专利标题(中): 电路结构的制造方法
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申请号: US12783806申请日: 2010-05-20
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公开(公告)号: US20110100543A1公开(公告)日: 2011-05-05
- 发明人: Tzyy-Jang Tseng , Chang-Ming Lee , Wen-Fang Liu , Cheng-Po Yu
- 申请人: Tzyy-Jang Tseng , Chang-Ming Lee , Wen-Fang Liu , Cheng-Po Yu
- 申请人地址: TW Taoyuan
- 专利权人: Unimicron Technology Corp.
- 当前专利权人: Unimicron Technology Corp.
- 当前专利权人地址: TW Taoyuan
- 优先权: TW98136682 20091029
- 主分类号: B32B38/10
- IPC分类号: B32B38/10 ; B32B38/04
摘要:
A manufacturing method of circuit structure is described as follows. Firstly, a composite dielectric layer, a circuit board and an insulating layer disposed therebetween are provided. The composite dielectric layer includes a non-platable dielectric layer and a platable dielectric layer between the non-platable dielectric layer and the insulating layer wherein the non-platable dielectric layer includes a chemical non-platable material and the platable dielectric layer includes a chemical platable material. Then, the composite dielectric layer, the circuit board and the insulating layer are compressed. Subsequently, a through hole passing through the composite dielectric layer and the insulating layer is formed and a conductive via connecting a circuit layer of the circuit board is formed therein. Then, a trench pattern passing through the non-platable dielectric layer is formed on the composite dielectric layer. Subsequently, a chemical plating process is performed to form a conductive pattern in the trench pattern.
公开/授权文献
- US08161638B2 Manufacturing method of circuit structure 公开/授权日:2012-04-24
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