发明申请
- 专利标题： NANOSTRUCTURES HAVING HIGH PERFORMANCE THERMOELECTRIC PROPERTIES
- 专利标题（中）： 具有高性能热电性能的纳米结构
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申请号： US12673366申请日： 2008-08-21
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公开(公告)号： US20110114145A1公开(公告)日： 2011-05-19
- 发明人: Peidong Yang , Arunava Majumdar , Allon I. Hochbaum , Renkun Chen , Raul Diaz Delgado
- 申请人： Peidong Yang , Arunava Majumdar , Allon I. Hochbaum , Renkun Chen , Raul Diaz Delgado
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 国际申请： PCT/US08/73922 WO 20080821
- 主分类号： H01L35/28
- IPC分类号： H01L35/28 ; H01L29/06 ; H01L35/30 ; B82Y40/00
摘要：
The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.
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