发明申请
- 专利标题: Fast Voltage Regulators For Charge Pumps
- 专利标题(中): 用于充电泵的快速稳压器
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申请号: US12987906申请日: 2011-01-10
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公开(公告)号: US20110121799A1公开(公告)日: 2011-05-26
- 发明人: Hieu Van Tran , Sang Thanh Nguyen , Anh Ly , Hung Q. Nguyen , Wingfu Aaron Lau , Nasrin Jaffari , Thuan Trong Vu , Vishal Sarin , Loc B. Hoang
- 申请人: Hieu Van Tran , Sang Thanh Nguyen , Anh Ly , Hung Q. Nguyen , Wingfu Aaron Lau , Nasrin Jaffari , Thuan Trong Vu , Vishal Sarin , Loc B. Hoang
- 申请人地址: US CA Sunnyvale
- 专利权人: Silicon Storage Technology, Inc.
- 当前专利权人: Silicon Storage Technology, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: G05F1/46
- IPC分类号: G05F1/46 ; G05F3/16 ; G05F3/08
摘要:
A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.
公开/授权文献
- US08067931B2 Fast voltage regulators for charge pumps 公开/授权日:2011-11-29
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