发明申请
- 专利标题: METHOD FOR DOPING NON-PLANAR TRANSISTORS
- 专利标题(中): 非平面晶体管的方法
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申请号: US12843726申请日: 2010-07-26
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公开(公告)号: US20110129990A1公开(公告)日: 2011-06-02
- 发明人: Tushar V. Mandrekar , Shankar Venkataraman , Zhong Qiang Hua , Manuel A. Hernandez
- 申请人: Tushar V. Mandrekar , Shankar Venkataraman , Zhong Qiang Hua , Manuel A. Hernandez
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/22
- IPC分类号: H01L21/22
摘要:
Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.
公开/授权文献
- US08114761B2 Method for doping non-planar transistors 公开/授权日:2012-02-14
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