发明申请
US20110129990A1 METHOD FOR DOPING NON-PLANAR TRANSISTORS 失效
非平面晶体管的方法

METHOD FOR DOPING NON-PLANAR TRANSISTORS
摘要:
Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.
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