公开(公告)号：US08114761B2

公开(公告)日：2012-02-14

申请号：US12843726

申请日：2010-07-26

申请人： Tushar V. Mandrekar ,  Shankar Venkataraman ,  Zhong Qiang Hua ,  Manuel A. Hernandez

发明人： Tushar V. Mandrekar ,  Shankar Venkataraman ,  Zhong Qiang Hua ,  Manuel A. Hernandez

IPC分类号： H01L21/00

CPC分类号： H01L21/2256 ,  H01L29/66803

摘要： Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.

摘要翻译： 公开了通过在非平面结构上形成共形掺杂的硅玻璃层来掺杂非平面结构的方法。 将其上形成有非平面结构的基板放置在化学气相沉积处理室中以沉积掺杂玻璃（例如BSG或PSG）的共形SACVD层。 然后将衬底暴露于RTP或激光退火步骤以将掺杂剂扩散到非平面结构中，然后通过蚀刻去除掺杂的玻璃层。

公开(公告)号：US20110129990A1

公开(公告)日：2011-06-02

申请号：US12843726

申请日：2010-07-26

申请人： Tushar V. Mandrekar ,  Shankar Venkataraman ,  Zhong Qiang Hua ,  Manuel A. Hernandez

发明人： Tushar V. Mandrekar ,  Shankar Venkataraman ,  Zhong Qiang Hua ,  Manuel A. Hernandez

IPC分类号： H01L21/22

CPC分类号： H01L21/2256 ,  H01L29/66803

摘要： Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.

摘要翻译： 公开了通过在非平面结构上形成共形掺杂的硅玻璃层来掺杂非平面结构的方法。 将其上形成有非平面结构的基板放置在化学气相沉积处理室中以沉积掺杂玻璃（例如BSG或PSG）的共形SACVD层。 然后将衬底暴露于RTP或激光退火步骤以将掺杂剂扩散到非平面结构中，然后通过蚀刻去除掺杂的玻璃层。