发明申请
US20110136332A1 METHODS OF FORMING INTEGRATED CIRCUIT DEVICES WITH CRACK-RESISTANT FUSE STRUCTURES
有权
形成集成电路设备的方法，具有抗电弧保险丝结构
- 专利标题： METHODS OF FORMING INTEGRATED CIRCUIT DEVICES WITH CRACK-RESISTANT FUSE STRUCTURES
- 专利标题（中）： 形成集成电路设备的方法，具有抗电弧保险丝结构
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申请号： US12960150申请日： 2010-12-03
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公开(公告)号： US20110136332A1公开(公告)日： 2011-06-09
- 发明人: Sang-Hoon Ahn , Gil-Heyun Choi , Jong-Myeong Lee , Sang-Don Nam , Kyu-Hee Han
- 申请人： Sang-Hoon Ahn , Gil-Heyun Choi , Jong-Myeong Lee , Sang-Don Nam , Kyu-Hee Han
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2009-0119506 20091204
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/31
摘要：
A fuse base insulating region, for example, an insulating interlayer or a compensation region disposed in an insulating interlayer, is formed on a substrate. An etch stop layer is formed on the fuse base insulating region and forming an insulating interlayer having a lower dielectric constant than the first fuse base insulating region on the etch stop layer. A trench extending through the insulating interlayer and the etch stop layer and at least partially into the fuse base insulating region is formed. A fuse is formed in the trench. The fuse base insulating region may have a greater mechanical strength and/or density than the second insulating interlayer.