发明申请
- 专利标题: Crystalline Silicon Formation Apparatus
- 专利标题(中): 结晶硅形成装置
-
申请号: US12637403申请日: 2009-12-14
-
公开(公告)号: US20110142730A1公开(公告)日: 2011-06-16
- 发明人: C.W. Lan , Kimsam-Hsieh , Wen-Huai Yu , Bruce Hsu , Ya-Lu Tsai , Wen-Ching Hsu , Szu-Hau Ho
- 申请人: C.W. Lan , Kimsam-Hsieh , Wen-Huai Yu , Bruce Hsu , Ya-Lu Tsai , Wen-Ching Hsu , Szu-Hau Ho
- 主分类号: B01D9/00
- IPC分类号: B01D9/00
摘要:
In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.
公开/授权文献
- US09109301B2 Crystalline silicon formation apparatus 公开/授权日:2015-08-18
信息查询