发明申请
US20110142730A1 Crystalline Silicon Formation Apparatus 有权
结晶硅形成装置

Crystalline Silicon Formation Apparatus
摘要:
In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.
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