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    Crystalline Silicon Formation Apparatus
    1.
    发明申请
    Crystalline Silicon Formation Apparatus 有权
    结晶硅形成装置

    公开(公告)号：US20110142730A1

    公开(公告)日：2011-06-16

    申请号：US12637403

    申请日：2009-12-14

    申请人： C.W. Lan ,  Kimsam-Hsieh ,  Wen-Huai Yu ,  Bruce Hsu ,  Ya-Lu Tsai ,  Wen-Ching Hsu ,  Szu-Hau Ho

    发明人： C.W. Lan ,  Kimsam-Hsieh ,  Wen-Huai Yu ,  Bruce Hsu ,  Ya-Lu Tsai ,  Wen-Ching Hsu ,  Szu-Hau Ho

    IPC分类号： B01D9/00

    CPC分类号： C30B28/06 ,  C30B29/06

    摘要： In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.

    摘要翻译： 在结晶硅形成装置中，将快速冷却方法施加到坩埚的底部，以控制多晶硅晶粒的生长取向，使得晶粒形成双边界，并且双边界是对称晶界，并且 晶粒被固化并单向向上生长以形成完整的多晶硅，使得难以在多晶硅中形成缺陷或杂质。

    Crystal Growth Device
    3.
    发明申请
    Crystal Growth Device 有权
    晶体生长装置

    公开(公告)号：US20130133569A1

    公开(公告)日：2013-05-30

    申请号：US13479497

    申请日：2012-05-24

    申请人： Chung-Wen Lan ,  Bruce Hsu ,  Wen-Huai Yu ,  Wen-Chieh Lan ,  Yu-Min Yang ,  Kai-Yuan Pai ,  Wen-Ching Hsu

    发明人： Chung-Wen Lan ,  Bruce Hsu ,  Wen-Huai Yu ,  Wen-Chieh Lan ,  Yu-Min Yang ,  Kai-Yuan Pai ,  Wen-Ching Hsu

    IPC分类号： C30B11/00

    CPC分类号： C30B11/003 ,  C30B11/007 ,  C30B21/02 ,  Y10T117/1092

    摘要： A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone.

    摘要翻译： 晶体生长装置包括坩埚和加热器设置。 坩埚具有底部和顶部开口。 加热器设置围绕坩埚并且可以相对于坩埚沿着坩埚的顶部 - 底部方向以及在第一和第二位置之间移动。 加热器设置包括温度高于第一温度加热区的第一温度加热区和第二温度加热区。 当坩埚处于第二温度加热区域时，加热器设置处于第一位置，并且当坩埚处于第一温度加热区域时处于第二位置。

    Crystal growth device
    4.
    发明授权
    Crystal growth device 有权
    晶体生长装置

    公开(公告)号：US09163326B2

    公开(公告)日：2015-10-20

    申请号：US13479497

    申请日：2012-05-24

    申请人： Chung-Wen Lan ,  Bruce Hsu ,  Wen-Huai Yu ,  Wen-Chieh Lan ,  Yu-Min Yang ,  Kai-Yuan Pai ,  Wen-Ching Hsu

    发明人： Chung-Wen Lan ,  Bruce Hsu ,  Wen-Huai Yu ,  Wen-Chieh Lan ,  Yu-Min Yang ,  Kai-Yuan Pai ,  Wen-Ching Hsu

    IPC分类号： C30B11/00 ,  C30B21/02

    CPC分类号： C30B11/003 ,  C30B11/007 ,  C30B21/02 ,  Y10T117/1092

    摘要： A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone.

    摘要翻译： 晶体生长装置包括坩埚和加热器设置。 坩埚具有底部和顶部开口。 加热器设置围绕坩埚并且可以相对于坩埚沿着坩埚的顶部 - 底部方向以及在第一和第二位置之间移动。 加热器设置包括温度高于第一温度加热区的第一温度加热区和第二温度加热区。 当坩埚处于第二温度加热区域时，加热器设置处于第一位置，并且当坩埚处于第一温度加热区域时处于第二位置。

    Crystalline silicon ingot and method of fabricating the same
    5.
    发明授权
    Crystalline silicon ingot and method of fabricating the same 有权
    结晶硅锭及其制造方法

    公开(公告)号：US09133565B2

    公开(公告)日：2015-09-15

    申请号：US13430131

    申请日：2012-03-26

    申请人： Wen-Chieh Lan ,  Yong-Cheng Yu ,  Wen-Huai Yu ,  Sung-Lin Hsu ,  Wen-Ching Hsu

    发明人： Wen-Chieh Lan ,  Yong-Cheng Yu ,  Wen-Huai Yu ,  Sung-Lin Hsu ,  Wen-Ching Hsu

    IPC分类号： C30B11/02 ,  C30B11/14 ,  C30B29/06 ,  C30B11/00

    CPC分类号： C30B11/02 ,  C30B11/00 ,  C30B11/14 ,  C30B29/06

    摘要： A crystalline silicon ingot and a method of manufacturing the same are provided. Using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds. Each of the primary monocrystalline silicon seeds has a first crystal orientation different from (100). Each of the secondary monocrystalline silicon seeds has a second crystal orientation different from the first crystal orientation. Each of the primary monocrystalline silicon seeds is adjacent to at least one of the secondary monocrystalline silicon seeds, and separate from the others of the primary monocrystalline silicon seeds.

    摘要翻译： 提供一种晶体硅锭及其制造方法。 使用结晶硅籽晶层，通过定向凝固工艺形成晶体硅锭。 晶体硅种子层由多个初级单晶硅晶种和多个次级单晶硅晶种形成。 每个初级单晶硅种子具有不同于（100）的第一晶体取向。 每个次级单晶硅种子具有不同于第一晶体取向的第二晶体取向。 每个初级单晶硅种子与次级单晶硅种子中的至少一种相邻，并与主要单晶硅晶种的其它晶体分离。