发明申请
US20110147942A1 METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE
审中-公开
制造半导体存储器件和半导体存储器件的方法
- 专利标题: METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE
- 专利标题(中): 制造半导体存储器件和半导体存储器件的方法
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申请号: US12838960申请日: 2010-07-19
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公开(公告)号: US20110147942A1公开(公告)日: 2011-06-23
- 发明人: Katsunori YAHASHI , Takuji Kuniya , Takaya Matsushita , Murato Kawai , Shuichi Taniguchi
- 申请人: Katsunori YAHASHI , Takuji Kuniya , Takaya Matsushita , Murato Kawai , Shuichi Taniguchi
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-287323 20091218
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L21/768
摘要:
A method of manufacturing a semiconductor memory device of an embodiment includes: after forming a first interconnection layer and a memory cell layer above a semiconductor substrate, forming first lines by forming first grooves extending in first direction; forming a thin film on the side walls of the first grooves; forming a stack structure by filling an interlayer insulating film in the first grooves; forming a second interconnection layer above the stack structure; forming second lines by forming second grooves extending in second direction; removing the thin film exposed at bottom of the second grooves; and forming columnar memory cells by removing the memory cell layer exposed at bottom of the second grooves. The thin film has higher etching rate than the interlayer insulating film, and is removed prior to portions of the memory cell layer adjoining the thin film.