发明申请
- 专利标题: ERASE OPERATIONS AND APPARATUS FOR A MEMORY DEVICE
- 专利标题(中): 用于存储器件的擦除操作和装置
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申请号: US12646136申请日: 2009-12-23
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公开(公告)号: US20110149659A1公开(公告)日: 2011-06-23
- 发明人: Akira Goda , Giuseppina Puzzilli
- 申请人: Akira Goda , Giuseppina Puzzilli
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/06
摘要:
Erase operations and apparatus configured to perform the erase operations are suitable for non-volatile memory devices having memory cells arranged in strings. One such method includes biasing select gate control lines of a string of memory cells to a first bias potential, biasing access lines of a pair of the memory cells to a second bias potential and biasing access lines of one or more remaining memory cells to a third potential. A ramping bias potential is applied to channel regions of the string of memory cells substantially concurrently with or subsequent to biasing the select gate control lines and the access lines, and floating the select gate control lines in response to the ramping bias potential reaching a release bias potential between an initial bias potential of the ramping bias potential and a target bias potential of the ramping bias potential.
公开/授权文献
- US08369158B2 Erase operations and apparatus for a memory device 公开/授权日:2013-02-05