发明申请
US20110151122A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM
有权
薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
- 专利标题： FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM
- 专利标题（中）： 薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
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申请号： US13035049申请日： 2011-02-25
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公开(公告)号： US20110151122A1公开(公告)日： 2011-06-23
- 发明人: HITOSHI KATO , Manabu Honma , Anthony Dip
- 申请人： HITOSHI KATO , Manabu Honma , Anthony Dip
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-215984 20080825; JP2009-056685 20090310; JP2009-139575 20090610
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; C23C16/458 ; C23C16/52
摘要：
A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.
公开/授权文献
- US08465592B2 Film deposition apparatus 公开/授权日：2013-06-18