公开(公告)号：US20110151122A1

公开(公告)日：2011-06-23

申请号：US13035049

申请日：2011-02-25

申请人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

发明人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC分类号： C23C16/45527 ,  C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转台，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US20090324828A1

公开(公告)日：2009-12-31

申请号：US12491313

申请日：2009-06-25

申请人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

发明人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转盘，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US20110139074A1

公开(公告)日：2011-06-16

申请号：US12963673

申请日：2010-12-09

申请人： HITOSHI KATO ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

发明人： HITOSHI KATO ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

IPC分类号： C23C16/458 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45578

摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

摘要翻译： 一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间， 可能流经第二空间而不是第一空间。

公开(公告)号：US20100132615A1

公开(公告)日：2010-06-03

申请号：US12627144

申请日：2009-11-30

申请人： HITOSHI KATO ,  Manabu Honma

发明人： HITOSHI KATO ,  Manabu Honma

IPC分类号： C23C16/46 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/45578

摘要： In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space.

摘要翻译： 在成膜装置中，第一分离气体从分离气体供给部排出到供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域。 提供加热器以通过辐射热来加热转台。 外侧壁构件设置在真空室的底部，以在设置加热器的区域中围绕转台。 空间形成构件设置在转台的旋转方向上彼此相邻的分隔区域之间并且从外侧壁构件延伸以在转台之间形成狭窄的空间。 吹扫气体从转台的下侧流过转台的外侧，通过狭窄的空间沿径向流动。

公开(公告)号：US20100260935A1

公开(公告)日：2010-10-14

申请号：US12753932

申请日：2010-04-05

申请人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/52 ,  C23C16/00 ,  C23C16/46

CPC分类号： H01L21/67115 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/46 ,  C23C16/463 ,  C23C16/482 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771

摘要： A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.

摘要翻译： 放置晶片的旋转台围绕垂直轴旋转，以向晶片的上表面提供用于允许第一反应气体吸附在上表面上的第一反应气体，与 产生具有回流性的中间产物的第一反应气体和与中间产物反应以产生反应产物的第二反应气体; 并且通过加热灯加热反应产物以使反应产物致密化。

公开(公告)号：US20100055314A1

公开(公告)日：2010-03-04

申请号：US12539633

申请日：2009-08-12

申请人： HITOSHI KATO ,  Manabu Honma

发明人： HITOSHI KATO ,  Manabu Honma

IPC分类号： C23C16/455

CPC分类号： H01L21/02104 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable including a substrate receiving area; a first reaction gas supplier for supplying a first reaction gas to a surface of the turntable having the substrate receiving area; a second reaction gas supplier, arranged away from the first reaction gas supplier along a circumferential direction of the turntable, for supplying a second reaction gas to the surface; a separation area located along the circumferential direction between a first process area of the first reaction gas and a second process area of the second reaction gas; a separation gas supplier for supplying a first separation gas to both sides of the separation area; a first heating unit for heating the first separation gas to the separation gas supplier; an evacuation opening for evacuating the gases supplied to the turntable; and a driver for rotating the turntable in the circumferential direction.

摘要翻译： 公开的薄膜沉积设备包括：转盘，其包括基板接收区域; 第一反应气体供应器，用于向具有基板接收区域的转台的表面供应第一反应气体; 第二反应气体供应器，沿着转台的圆周方向布置成远离第一反应气体供应器，用于向表面供应第二反应气体; 沿着圆周方向位于第一反应气体的第一处理区域和第二反应气体的第二处理区域之间的分离区域; 用于将分离气体供给到分离区域的两侧的分离气体供给装置; 第一加热单元，用于将第一分离气体加热到分离气体供应器; 用于排出供应到转台的气体的排气口; 以及用于在圆周方向上旋转转盘的驱动器。

公开(公告)号：US20100055297A1

公开(公告)日：2010-03-04

申请号：US12547545

申请日：2009-08-26

申请人： HITOSHI KATO ,  Manabu Honma ,  Kohichi Orito

发明人： HITOSHI KATO ,  Manabu Honma ,  Kohichi Orito

IPC分类号： C23C16/52 ,  B05C11/10

CPC分类号： C23C16/45551 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/52

摘要： There is disclosed a film deposition apparatus and a film deposition method for depositing a film on a substrate by carrying out cycles of supplying in turn at least two source gases to the substrate in order to form a layer of a reaction product, and a computer readable storage medium storing a computer program for causing the film deposition apparatus to carry out the film deposition method.

摘要翻译： 公开了一种膜沉积设备和薄膜沉积方法，用于通过进行向基板提供至少两种源气体以便形成反应产物层的循环，从而在基板上沉积膜，并且计算机可读 存储用于使成膜装置进行成膜方法的计算机程序的存储介质。

公开(公告)号：US20100229797A1

公开(公告)日：2010-09-16

申请号：US12713317

申请日：2010-02-26

申请人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/00

CPC分类号： H01L21/68764 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45589 ,  H01L21/68771

摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.

摘要翻译： 公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于 基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

公开(公告)号：US20100227046A1

公开(公告)日：2010-09-09

申请号：US12713250

申请日：2010-02-26

申请人： HITOSHI KATO ,  Manabu Honma

发明人： HITOSHI KATO ,  Manabu Honma

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： H01L21/67253 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/52 ,  C23C16/54 ,  G01B11/0683 ,  G01N21/211 ,  H01L21/67196 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/68764 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A disclosed film deposition apparatus includes a transparent window in a ceiling plate of a vacuum chamber. A film thickness of a film deposited on a substrate is measured by emitting light to the substrate through the transparent window by a film thickness measurement system that includes optical units arranged on or above the transparent window, optical fiber cables connected to the corresponding optical units, a measurement unit to which the optical fiber cables are connected, and a control unit electrically connected to the measurement unit in order to control the measurement unit.

摘要翻译： 公开的薄膜沉积设备包括在真空室的顶板中的透明窗口。 通过包括布置在透明窗口上方或上方的光学单元的膜厚测量系统通过透明窗口向基板发射光，测量沉积在基板上的膜的膜厚度，连接到相应的光学单元的光纤电缆， 连接光纤电缆的测量单元，以及与测量单元电连接以控制测量单元的控制单元。

公开(公告)号：US20100132614A1

公开(公告)日：2010-06-03

申请号：US12620750

申请日：2009-11-18

申请人： HITOSHI KATO ,  Manabu Honma

发明人： HITOSHI KATO ,  Manabu Honma

IPC分类号： C23C16/50 ,  C23C16/00

CPC分类号： C23C16/4551 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  H01L21/6719 ,  H01L21/67703

摘要： A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.

摘要翻译： 一种成膜装置，包括具有用于支撑基板的基板放置区域的旋转台，包括容器和顶板的真空容器，构造成打开和关闭顶板的开闭机构，布置成穿过的反应气体喷嘴 并且由所述容器的外壁支撑，以相对于所述旋转台的旋转中心位于不同的角度位置，以面对所述基板放置区域通过的区域，所述反应气体喷嘴具有沿径向布置的气体排出口， 将相应的反应气体供应到晶片，从而形成相应的处理区域，放电气体供应单元位于处理区域之间的角位置处，以供应净化气体，以形成隔离区域，隔离区域将过程区域的气氛彼此隔离;以及 排气单元构造成排出真空容器内的气氛。