公开(公告)号：US08465591B2

公开(公告)日：2013-06-18

申请号：US12491313

申请日：2009-06-25

申请人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

发明人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/00

CPC分类号： C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

公开(公告)号：US20090324828A1

公开(公告)日：2009-12-31

申请号：US12491313

申请日：2009-06-25

申请人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

发明人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转盘，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US20110151122A1

公开(公告)日：2011-06-23

申请号：US13035049

申请日：2011-02-25

申请人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

发明人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC分类号： C23C16/45527 ,  C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转台，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US08465592B2

公开(公告)日：2013-06-18

申请号：US13035049

申请日：2011-02-25

申请人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

发明人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/00

CPC分类号： C23C16/45527 ,  C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转台，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US20090324826A1

公开(公告)日：2009-12-31

申请号：US12147707

申请日：2008-06-27

申请人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

发明人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/402

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转台，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US08944077B2

公开(公告)日：2015-02-03

申请号：US12617779

申请日：2009-11-13

申请人： Hitoshi Kato ,  Manabu Honma

发明人： Hitoshi Kato ,  Manabu Honma

IPC分类号： C23C16/00 ,  B08B7/00 ,  C23C16/44 ,  H01L21/67 ,  H01L21/687

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  H01L21/67028 ,  H01L21/68764 ,  H01L21/68771

摘要： A disclosed film deposition apparatus includes a susceptor provided rotatably in a chamber; a substrate receiving portion provided in one surface of the susceptor, for receiving a substrate; a reaction gas supplying member configured to supply a reaction gas to the one surface of the susceptor; a cleaning member including: a first concave member that is provided above the susceptor and open toward the one surface, thereby defining a space of an inverted concave shape, a second concave member provided over the first concave member to define a gas passage between the first concave member and the second concave member, a cleaning gas supplying portion configured to supply a cleaning gas to the space, and an evacuation pipe configured to be in gaseous communication with the gas passage and extend out from the chamber; and an evacuation opening provided in the chamber in order to evacuate the chamber.

摘要翻译： 公开的薄膜沉积设备包括可旋转地设置在腔室中的基座; 衬底接收部，设置在所述基座的一个表面中，用于接收衬底; 反应气体供给部件，被配置为向所述基座的一个表面供给反应气体; 清洁部件，包括：设置在所述基座上方并朝向所述一个表面开口的第一凹入部件，由此限定倒置凹部的空间;设置在所述第一凹部部件上方的第二凹部部件， 凹构件和第二凹构件，构造成向所述空间供给清洁气体的清洁气体供给部和构造成与所述气体通道气体连通并从所述室延伸出的排气管; 以及设置在腔室中以排空腔室的排气口。

公开(公告)号：US08840727B2

公开(公告)日：2014-09-23

申请号：US12550528

申请日：2009-08-31

申请人： Hitoshi Kato ,  Manabu Honma

发明人： Hitoshi Kato ,  Manabu Honma

IPC分类号： C23C16/455 ,  C23C16/00 ,  C23C16/52 ,  H01L21/687 ,  H01L21/67

CPC分类号： C23C16/52 ,  C23C16/45544 ,  C23C16/45565 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771

摘要： A film deposition apparatus for depositing a thin film on a substrate by feeding at least two kinds of reaction gases in a vacuum chamber includes a turntable; a substrate placement part on the turntable; a first and a second reaction gas feed part provided apart from each other to feed a first and a second reaction gas into a first and a second process region, respectively, on the turntable; a separation region positioned between the first and second process regions and including a first separation gas feed part to feed a first separation gas and a ceiling surface; a center part region positioned inside the vacuum chamber and including an ejection opening for ejecting a second separation gas; an evacuation port; and a drive part to rotate the turntable so that the substrate passes through the first and second process regions at different angular velocities of the turntable.

摘要翻译： 一种用于通过在真空室中馈送至少两种反应气体而将薄膜沉积在基底上的成膜装置包括转台; 转盘上的基板放置部分; 第一和第二反应气体供给部，彼此分开设置，以将第一和第二反应气体分别输送到转台上的第一和第二处理区域; 位于所述第一处理区域和所述第二处理区域之间并且包括用于供给第一分离气体和顶面的第一分离气体进料部分的分离区域; 位于真空室内的中心部分区域，并且包括用于喷射第二分离气体的喷射口; 撤离港 以及用于旋转转盘的驱动部件，使得基板以不同的转台角速度穿过第一和第二处理区域。

公开(公告)号：US20100229797A1

公开(公告)日：2010-09-16

申请号：US12713317

申请日：2010-02-26

申请人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/00

CPC分类号： H01L21/68764 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45589 ,  H01L21/68771

摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.

摘要翻译： 公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于 基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

公开(公告)号：US20100227059A1

公开(公告)日：2010-09-09

申请号：US12713225

申请日：2010-02-26

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/458 ,  C23C16/00 ,  C23C16/52

CPC分类号： C23C16/45551

摘要： A film is deposited to a predetermined thickness on a wafer by allowing the wafer placed on a susceptor to alternately move through plural process areas where corresponding plural reaction gases are supplied from corresponding plural reaction gas supplying portions and a separation area where a separation gas is supplied from a separation gas supplying portion in order to separate the plural reaction gases. Such movement is achieved by rotating the susceptor relative to the plural reaction gas supplying portions and the separation gas supplying portion, or rotating the plural reaction gas supplying portions and the separation gas supplying portion relative to the susceptor. Then, when the film is deposited in the above manner to a predetermined thickness, the film deposition is temporarily stopped; the wafer is rotated around its center; and the film is deposited to another predetermined thickness in the same manner.

摘要翻译： 通过允许放置在基座上的晶片交替地移动通过从相应的多个反应气体供应部分供应相应的多个反应气体的多个处理区域和分离气体供应的分离区域，将薄膜沉积到晶片上的预定厚度 从分离气体供给部分分离多个反应气体。 通过使基座相对于多个反应气体供给部和分离气体供给部旋转，或者使多个反应气体供给部和分离气体供给部相对于基座旋转而实现。 然后，当以上述方式将膜沉积到预定厚度时，膜沉积暂时停止; 晶片绕其中心旋转; 并且以相同的方式将膜沉积到另一预定厚度。

公开(公告)号：US20100227046A1

公开(公告)日：2010-09-09

申请号：US12713250

申请日：2010-02-26

申请人： HITOSHI KATO ,  Manabu Honma

发明人： HITOSHI KATO ,  Manabu Honma

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： H01L21/67253 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/52 ,  C23C16/54 ,  G01B11/0683 ,  G01N21/211 ,  H01L21/67196 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/68764 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A disclosed film deposition apparatus includes a transparent window in a ceiling plate of a vacuum chamber. A film thickness of a film deposited on a substrate is measured by emitting light to the substrate through the transparent window by a film thickness measurement system that includes optical units arranged on or above the transparent window, optical fiber cables connected to the corresponding optical units, a measurement unit to which the optical fiber cables are connected, and a control unit electrically connected to the measurement unit in order to control the measurement unit.

摘要翻译： 公开的薄膜沉积设备包括在真空室的顶板中的透明窗口。 通过包括布置在透明窗口上方或上方的光学单元的膜厚测量系统通过透明窗口向基板发射光，测量沉积在基板上的膜的膜厚度，连接到相应的光学单元的光纤电缆， 连接光纤电缆的测量单元，以及与测量单元电连接以控制测量单元的控制单元。