发明申请
- 专利标题： STRUCTURE AND METHOD TO CREATE STRESS TRENCH
- 专利标题（中）： 结构和方法创建应力梯度
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申请号： US12647796申请日： 2009-12-28
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公开(公告)号： US20110156223A1公开(公告)日： 2011-06-30
- 发明人: Renata A. Camillo-Castillo , Robert J. Gauthier, JR. , Richard A. Phelps , Robert M. Rassel , Andreas D. Stricker
- 申请人： Renata A. Camillo-Castillo , Robert J. Gauthier, JR. , Richard A. Phelps , Robert M. Rassel , Andreas D. Stricker
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/762
摘要：
An integrated circuit (IC) chip is provided comprising at least one trench including a stress-inducing material which imparts a stress on a channel region of a device, such as a junction gate field-effect transistor (JFET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). A related method is also disclosed.
公开/授权文献
- US08242584B2 Structure and method to create stress trench 公开/授权日：2012-08-14