发明申请
- 专利标题： Semiconductor device and manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件及半导体器件的制造方法
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申请号： US12929287申请日： 2011-01-12
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公开(公告)号： US20110169132A1公开(公告)日： 2011-07-14
- 发明人: Youichi Yamamoto , Naomi Fukumaki , Misato Sakamoto , Yoshitake Kato
- 申请人： Youichi Yamamoto , Naomi Fukumaki , Misato Sakamoto , Yoshitake Kato
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2010-005780 20100114
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
A semiconductor device has a capacitor element in which a capacitance dielectric film is disposed between an upper electrode film (upper electrode film, an upper electrode film) and a lower electrode film, and the lower electrode film has polycrystalline titanium nitride at least to a portion in contact with the capacitance dielectric film.
公开/授权文献
- US09142609B2 MIM capacitor device 公开/授权日：2015-09-22
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