发明申请
US20110175164A1 DEVICE STRUCTURE, LAYOUT AND FABRICATION METHOD FOR UNIAXIALLY STRAINED TRANSISTORS
有权
非均匀应变晶体管的器件结构，布局和制造方法
- 专利标题： DEVICE STRUCTURE, LAYOUT AND FABRICATION METHOD FOR UNIAXIALLY STRAINED TRANSISTORS
- 专利标题（中）： 非均匀应变晶体管的器件结构，布局和制造方法
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申请号： US12689346申请日： 2010-01-19
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公开(公告)号： US20110175164A1公开(公告)日： 2011-07-21
- 发明人: Stephen W. Bedell , Huiming Bu , Kangguo Cheng , Bruce B. Doris , Johnathan E. Faltermeier , Ali Khakifirooz , Devendra K. Sadana , Chun-chen Yeh
- 申请人： Stephen W. Bedell , Huiming Bu , Kangguo Cheng , Bruce B. Doris , Johnathan E. Faltermeier , Ali Khakifirooz , Devendra K. Sadana , Chun-chen Yeh
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/86
摘要：
A semiconductor device and method for fabricating a semiconductor device include providing a strained semiconductor layer having a first strained axis, forming an active region within a surface of the strained semiconductor layer where the active region has a longitudinal axis along the strained axis and forming gate structures over the active region. Raised source/drain regions are formed on the active regions above and over the surface of the strained semiconductor layer and adjacent to the gate structures to form transistor devices.
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