发明申请
- 专利标题: PLASMA ENHANCED ATOMIC LAYER DEPOSITION PROCESS
- 专利标题(中): 等离子体增强原子层沉积过程
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申请号: US12872040申请日: 2010-08-31
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公开(公告)号: US20110183079A1公开(公告)日: 2011-07-28
- 发明人: Thomas Jackson , Devin A. Mourey , Dalong Zhao
- 申请人: Thomas Jackson , Devin A. Mourey , Dalong Zhao
- 申请人地址: US PA University Park
- 专利权人: Penn State Research Foundation
- 当前专利权人: Penn State Research Foundation
- 当前专利权人地址: US PA University Park
- 主分类号: C08F2/46
- IPC分类号: C08F2/46
摘要:
Improved systems, methods and compositions for plasma enhanced atomic layer deposition are herein disclosed. According to one embodiment, a method includes exposing a substrate to a first process material to form a film comprising at least a portion of the first process material at a surface of the substrate. The substrate is exposed to a second process material and the second process material is activated into plasma to initiate a reaction between at least a portion of the first process material and at least a portion of the second process material at the surface of the substrate.
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